Tanpri, al gade nan vèsyon an angle kòm vèsyon ofisyèl nou an.

: France~~(Français)~~ Germany~~(Deutsch)~~ Italy~~(Italia)~~ Russian~~(русский)~~ Poland~~(polski)~~ Czech~~(Čeština)~~ Luxembourg~~(Lëtzebuergesch)~~ Netherlands~~(Nederland)~~ Iceland~~(íslenska)~~ Hungarian~~(Magyarország)~~ Spain~~(español)~~ Portugal~~(Português)~~ Turkey~~(Türk dili)~~ Bulgaria~~(Български език)~~ Ukraine~~(Україна)~~ Greece~~(Ελλάδα)~~ Israel~~(עִבְרִית)~~ Sweden~~(Svenska)~~ Finland~~(Svenska)~~ Finland~~(Suomi)~~ Romania~~(românesc)~~ Moldova~~(românesc)~~ Slovakia~~(Slovenská)~~ Denmark~~(Dansk)~~ Slovenia~~(Slovenija)~~ Slovenia~~(Hrvatska)~~ Croatia~~(Hrvatska)~~ Serbia~~(Hrvatska)~~ Montenegro~~(Hrvatska)~~ Bosnia and Herzegovina~~(Hrvatska)~~ Lithuania~~(lietuvių)~~ Spain~~(Português)~~ Switzerland~~(Deutsch)~~ United Kingdom~~(English)~~ Japan~~(日本語)~~ Korea~~(한국의)~~ Thailand~~(ภาษาไทย)~~ Malaysia~~(Melayu)~~ Singapore~~(Melayu)~~ Vietnam~~(Tiếng Việt)~~ Philippines~~(Pilipino)~~ United Arab Emirates~~(العربية)~~ Iran~~(فارسی)~~ Tajikistan~~(فارسی)~~ India~~(हिंदी)~~ Madagascar~~(malaɡasʲ)~~ New Zealand~~(Maori)~~ Brazil~~(Português)~~ Angola~~(Português)~~ Mozambique~~(Português)~~ United States~~(English)~~ Canada~~(English)~~ Haiti~~(Ayiti)~~ Mexico~~(español)~~

Kay Pwodwi yo Diskresyon semiconductor pwodwi Transistè - IGBTs - Single~~RGTH40TS65DGC11~~

Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

~~Favori~~

RGTH40TS65DGC11 - Rohm Semiconductor

Manifakti Nimewo Pati: RGTH40TS65DGC11

Manifakti: LAPIS Technology

Allelco Nimewo Pati: 32D-RGTH40TS65DGC11

ECAD modèl

Pati Deskripsyon: IGBT TRNCH FIELD 650V 40A TO247N

Deskripsyon detaye

Pake: TO-247-3

Done fèy: ~~RGTH40TS65DGC11.pdf~~

RoHs Status

~~Konpare~~

Nan stok: 22768

Espesifikasyon

Espesifikasyon RGTH40TS65DGC11 Tech
Rohm Semiconductor - RGTH40TS65DGC11 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RGTH40TS65DGC11

Pwodwi atribi	Valè atribi
Manifakti	LAPIS Technology
Voltage - Pèseptè Emitter pann (Max)	650 V
Vce (sou) (Max) @ Vge, Ic	2.1V @ 15V, 20A
Kondisyon tès	400V, 20A, 10Ohm, 15V
Td (sou / sou) @ 25 ° C	22ns/73ns
Oblije chanje enèji	-
Founisè Aparèy pake	TO-247N
Seri	-
Tan rekiperasyon ranvèse (trr)	58 ns
Pouvwa - Max	144 W

Pwodwi atribi	Valè atribi
Pake / Ka	TO-247-3
Pakèt	Tube
Operating Tanperati	-40°C ~ 175°C (TJ)
Mounting Kalite	Through Hole
Kalite Antre	Standard
IGBT Kalite	Trench Field Stop
Gate Charge	40 nC
Kouran - Pèseptè Pulsed (Icm)	80 A
Kouran - Pèseptè (Ic) (Max)	40 A
Nimewo pwodwi baz	RGTH40

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RGTH40TS65DGC11.

Pwodwi atribi
Nimewo Pati	RGTH40TS65DGC11	ISL9V3036S3S	FGAF40N60UFDTU	RGT50TS65DGC13
Manifakti	Rohm Semiconductor	onsemi	onsemi	Rohm Semiconductor
Pake / Ka	TO-247-3	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-3P-3 Full Pack	TO-247-3
Gate Charge	40 nC	17 nC	77 nC	49 nC
Voltage - Pèseptè Emitter pann (Max)	650 V	360 V	600 V	650 V
Vce (sou) (Max) @ Vge, Ic	2.1V @ 15V, 20A	1.6V @ 4V, 6A	3V @ 15V, 20A	2.1V @ 15V, 25A
Tan rekiperasyon ranvèse (trr)	58 ns	-	95 ns	58 ns
Td (sou / sou) @ 25 ° C	22ns/73ns	-/4.8µs	15ns/65ns	27ns/88ns
Nimewo pwodwi baz	RGTH40	ISL9	FGAF40	RGT50
Operating Tanperati	-40°C ~ 175°C (TJ)	-40°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-40°C ~ 175°C (TJ)
Pouvwa - Max	144 W	150 W	100 W	174 W
Kouran - Pèseptè Pulsed (Icm)	80 A	-	160 A	75 A
Kondisyon tès	400V, 20A, 10Ohm, 15V	300V, 1kOhm, 5V	300V, 20A, 10Ohm, 15V	400V, 25A, 10Ohm, 15V
Oblije chanje enèji	-	-	470µJ (on), 130µJ (off)	-
Kalite Antre	Standard	Logic	Standard	Standard
Seri	-	EcoSPARK®	-	-
Pakèt	Tube	Tube	Tube	Tube
Mounting Kalite	Through Hole	Surface Mount	Through Hole	Through Hole
Kouran - Pèseptè (Ic) (Max)	40 A	21 A	40 A	48 A
IGBT Kalite	Trench Field Stop	-	-	Trench Field Stop
Founisè Aparèy pake	TO-247N	D²PAK (TO-263)	TO-3PF	TO-247G

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