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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRS1G300GNTB
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RS1G300GNTB - Rohm Semiconductor

Manifakti Nimewo Pati
RS1G300GNTB
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RS1G300GNTB
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 30A 8HSOP
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
RS1G300GNTB.pdf
RoHs Status
Nan stok: 42220

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RS1G300GNTB Tech
Rohm Semiconductor - RS1G300GNTB espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RS1G300GNTB

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-HSOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 3W (Ta), 35W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4230 pF @ 20 V  
Pòtay Charge (Qg) (Max) @ Vgs 56.8 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Ta)  
Nimewo pwodwi baz RS1G  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RS1G300GNTB.

Pwodwi atribi RS1G300GNTB RS1G150MNTB RS1G180MNTB RS1G260MNTB
Nimewo Pati RS1G300GNTB RS1G150MNTB RS1G180MNTB RS1G260MNTB
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Pòtay Charge (Qg) (Max) @ Vgs 56.8 nC @ 10 V 15 nC @ 10 V 19.5 nC @ 10 V 44 nC @ 10 V
Kapasite Antre (Ciss) (Max) @ Vds 4230 pF @ 20 V 930 pF @ 20 V 1293 pF @ 20 V 2988 pF @ 20 V
Vgs (th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Nimewo pwodwi baz RS1G RS1G RS1G RS1G
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds Sou (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V 10.6mOhm @ 15A, 10V 7mOhm @ 18A, 10V 3.3mOhm @ 26A, 10V
Founisè Aparèy pake 8-HSOP 8-HSOP 8-HSOP 8-HSOP
Drenaj Sous Voltage (Vdss) 40 V 40 V 40 V 40 V
Dissipasyon pouvwa (Max) 3W (Ta), 35W (Tc) 3W (Ta), 25W (Tc) 3W (Ta), 30W (Tc) 3W (Ta), 35W (Tc)
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Vgs (Max) ±20V ±20V ±20V ±20V
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Ta) 15A (Ta) 18A (Ta), 80A (Tc) 26A (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Seri - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

RS1G300GNTB fich PDF

Download RS1G300GNTB PDF fich ak dokiman Rohm Semiconductor pou RS1G300GNTB - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

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Sètifikasyon & Manm

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Rohm Semiconductor

RS1G300GNTB

Rohm Semiconductor
32D-RS1G300GNTB

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