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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRSD200N05TL
RSD200N05TL Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RSD200N05TL - Rohm Semiconductor

Manifakti Nimewo Pati
RSD200N05TL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RSD200N05TL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 45V 20A CPT3
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
RSD200N05TL.pdf
RoHs Status
Nan stok: 107440

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Kantite

Espesifikasyon

Espesifikasyon RSD200N05TL Tech
Rohm Semiconductor - RSD200N05TL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RSD200N05TL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake CPT3  
Seri -  
Rds Sou (Max) @ Id, Vgs 28mOhm @ 20A, 10V  
Dissipasyon pouvwa (Max) 20W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 950 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 12 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 45 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Ta)  
Nimewo pwodwi baz RSD200  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RSD200N05TL.

Pwodwi atribi RSD200N05TL RSD220N06TL RSD175N10TL RSD201N10TL
Nimewo Pati RSD200N05TL RSD220N06TL RSD175N10TL RSD201N10TL
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4V, 10V 4V, 10V 4V, 10V
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Vgs (th) (Max) @ Id 2.5V @ 1mA - 2.5V @ 1mA 2.5V @ 1mA
Nimewo pwodwi baz RSD200 RSD220 RSD175 RSD201
Pòtay Charge (Qg) (Max) @ Vgs 12 nC @ 5 V - 24 nC @ 10 V 55 nC @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Seri - - - -
Kapasite Antre (Ciss) (Max) @ Vds 950 pF @ 10 V - 950 pF @ 25 V 2100 pF @ 25 V
Drenaj Sous Voltage (Vdss) 45 V 60 V 100 V 100 V
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Dissipasyon pouvwa (Max) 20W (Tc) 20W (Ta) 20W (Tc) 850mW (Ta), 20W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Ta) 22A (Ta) 17.5A (Ta) 20A (Tc)
Rds Sou (Max) @ Id, Vgs 28mOhm @ 20A, 10V - 105mOhm @ 8.8A, 10V 46mOhm @ 20A, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Founisè Aparèy pake CPT3 CPT3 CPT3 CPT3
Vgs (Max) ±20V ±20V ±20V ±20V

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Sètifikasyon & Manm

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RSD200N05TL Image

RSD200N05TL

Rohm Semiconductor
32D-RSD200N05TL

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