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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRSJ250P10FRATL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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RSJ250P10FRATL - Rohm Semiconductor

Manifakti Nimewo Pati
RSJ250P10FRATL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RSJ250P10FRATL
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 100V 25A LPTS
Deskripsyon detaye
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
RSJ250P10FRATL.pdf
RoHs Status
Konpare
Nan stok: 41796

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Espesifikasyon

Espesifikasyon RSJ250P10FRATL Tech
Rohm Semiconductor - RSJ250P10FRATL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RSJ250P10FRATL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake LPTS  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 63mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) 50W (Ta)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 8000 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 25A (Ta)  
Nimewo pwodwi baz RSJ250  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RSJ250P10FRATL.

Pwodwi atribi RSJ250P10FRATL C3M0075120D STD60NF06T4 FCPF380N60E
Nimewo Pati RSJ250P10FRATL C3M0075120D STD60NF06T4 FCPF380N60E
Manifakti Rohm Semiconductor Wolfspeed, Inc. STMicroelectronics Fairchild Semiconductor
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Bulk
Vgs (th) (Max) @ Id 2.5V @ 1mA 4V @ 5mA 4V @ 250µA 3.5V @ 250µA
Mounting Kalite Surface Mount Through Hole Surface Mount Through Hole
Operating Tanperati 150°C -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 15V 10V 10V
Seri Automotive, AEC-Q101 C3M™ STripFET™ II SuperFET® II
Kouran - Kontini Drain (Id) @ 25 ° C 25A (Ta) 30A (Tc) 60A (Tc) 10.2A (Tc)
Vgs (Max) ±20V +19V, -8V ±20V ±20V
Nimewo pwodwi baz RSJ250 C3M0075120 STD60 FCPF380
Kapasite Antre (Ciss) (Max) @ Vds 8000 pF @ 25 V 1350 pF @ 1000 V 1810 pF @ 25 V 1770 pF @ 25 V
Drenaj Sous Voltage (Vdss) 100 V 1200 V 60 V 600 V
Fèt tip P-Channel N-Channel N-Channel N-Channel
Founisè Aparèy pake LPTS TO-247-3 DPAK TO-220F
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 Full Pack
Teknoloji MOSFET (Metal Oxide) SiCFET (Silicon Carbide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Dissipasyon pouvwa (Max) 50W (Ta) 113.6W (Tc) 110W (Tc) 31W (Tc)
Pòtay Charge (Qg) (Max) @ Vgs 60 nC @ 5 V 54 nC @ 15 V 66 nC @ 10 V 45 nC @ 10 V
Rds Sou (Max) @ Id, Vgs 63mOhm @ 25A, 10V 90mOhm @ 20A, 15V 16mOhm @ 30A, 10V 380mOhm @ 5A, 10V

RSJ250P10FRATL fich PDF

Download RSJ250P10FRATL PDF fich ak dokiman Rohm Semiconductor pou RSJ250P10FRATL - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf AEC-Q101 Automotive Requirements.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

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Rohm Semiconductor

RSJ250P10FRATL

Rohm Semiconductor
32D-RSJ250P10FRATL

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