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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRSQ015N06TR
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RSQ015N06TR - Rohm Semiconductor

Manifakti Nimewo Pati
RSQ015N06TR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RSQ015N06TR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 1.5A TSMT6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
RSQ015N06TR.pdf
RoHs Status
Nan stok: 203560

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RSQ015N06TR Tech
Rohm Semiconductor - RSQ015N06TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RSQ015N06TR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT6 (SC-95)  
Seri -  
Rds Sou (Max) @ Id, Vgs 290mOhm @ 1.5A, 10V  
Dissipasyon pouvwa (Max) 950mW (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 110 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 2 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.5A (Ta)  
Nimewo pwodwi baz RSQ015  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RSQ015N06TR.

Pwodwi atribi RSQ015N06TR RSQ025P03TR RSQ015P10TR RSQ030P03TR
Nimewo Pati RSQ015N06TR RSQ025P03TR RSQ015P10TR RSQ030P03TR
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Kapasite Antre (Ciss) (Max) @ Vds 110 pF @ 10 V 320 pF @ 10 V 950 pF @ 25 V 440 pF @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 4V, 10V 4V, 10V 4V, 10V
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Founisè Aparèy pake TSMT6 (SC-95) TSMT6 (SC-95) TSMT6 (SC-95) TSMT6 (SC-95)
Vgs (th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Drenaj Sous Voltage (Vdss) 60 V 30 V 100 V 30 V
Kouran - Kontini Drain (Id) @ 25 ° C 1.5A (Ta) 2.5A (Ta) 1.5A (Ta) 3A (Ta)
Vgs (Max) ±20V ±20V ±20V ±20V
Dissipasyon pouvwa (Max) 950mW (Ta) 1.25W (Ta) 600mW (Ta) 1.25W (Ta)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Nimewo pwodwi baz RSQ015 RSQ025 RSQ015 RSQ030
Pòtay Charge (Qg) (Max) @ Vgs 2 nC @ 5 V 4.4 nC @ 5 V 17 nC @ 5 V 6 nC @ 5 V
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Rds Sou (Max) @ Id, Vgs 290mOhm @ 1.5A, 10V 110mOhm @ 2.5A, 10V 470mOhm @ 1.5A, 10V 80mOhm @ 3A, 10V
FET Feature - - - -
Fèt tip N-Channel P-Channel P-Channel P-Channel
Seri - - - -

RSQ015N06TR fich PDF

Download RSQ015N06TR PDF fich ak dokiman Rohm Semiconductor pou RSQ015N06TR - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf
PCN konsepsyon/spesifikasyon
TSMT Package Updates 24/Dec/2014.pdf

Shipment

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Sètifikasyon & Manm

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Rohm Semiconductor

RSQ015N06TR

Rohm Semiconductor
32D-RSQ015N06TR

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