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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRTQ020N05TR
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RTQ020N05TR - Rohm Semiconductor

Manifakti Nimewo Pati
RTQ020N05TR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RTQ020N05TR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 45V 2A TSMT6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
RTQ020N05TR.pdf
RoHs Status
Nan stok: 192070

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RTQ020N05TR Tech
Rohm Semiconductor - RTQ020N05TR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RTQ020N05TR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 1.5V @ 1mA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT6 (SC-95)  
Seri -  
Rds Sou (Max) @ Id, Vgs 190mOhm @ 2A, 4.5V  
Dissipasyon pouvwa (Max) 600mW (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 150 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 45 V  
Kouran - Kontini Drain (Id) @ 25 ° C 2A (Ta)  
Nimewo pwodwi baz RTQ020  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RTQ020N05TR.

Pwodwi atribi RTQ020N05TR RTQ020N03TR RTQ025P02TR RTQ020N03
Nimewo Pati RTQ020N05TR RTQ020N03TR RTQ025P02TR RTQ020N03
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor LAPIS Technology
Dissipasyon pouvwa (Max) 600mW (Ta) 1.25W (Ta) 1.25W (Ta) -
Seri - - - -
Kapasite Antre (Ciss) (Max) @ Vds 150 pF @ 10 V 135 pF @ 10 V 580 pF @ 10 V -
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Founisè Aparèy pake TSMT6 (SC-95) TSMT6 (SC-95) TSMT6 (SC-95) -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) -
Vgs (Max) ±12V ±12V ±12V -
Drenaj Sous Voltage (Vdss) 45 V 30 V 20 V -
Pòtay Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V 3.3 nC @ 4.5 V 6.4 nC @ 4.5 V -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Nimewo pwodwi baz RTQ020 RTQ020 RTQ025 -
Rds Sou (Max) @ Id, Vgs 190mOhm @ 2A, 4.5V 125mOhm @ 2A, 4.5V 100mOhm @ 2.5A, 4.5V -
Pake / Ka SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Fèt tip N-Channel N-Channel P-Channel -
Kouran - Kontini Drain (Id) @ 25 ° C 2A (Ta) 2A (Ta) 2.5A (Ta) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V -
FET Feature - - - -
Vgs (th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 2V @ 1mA -

RTQ020N05TR fich PDF

Download RTQ020N05TR PDF fich ak dokiman Rohm Semiconductor pou RTQ020N05TR - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf
PCN konsepsyon/spesifikasyon
TSMT Package Updates 24/Dec/2014.pdf

Shipment

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Sètifikasyon & Manm

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Rohm Semiconductor

RTQ020N05TR

Rohm Semiconductor
32D-RTQ020N05TR

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