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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSCT3080ALGC11
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SCT3080ALGC11 - Rohm Semiconductor

Manifakti Nimewo Pati
SCT3080ALGC11
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-SCT3080ALGC11
ECAD modèl
Pati Deskripsyon
SICFET N-CH 650V 30A TO247N
Deskripsyon detaye
Pake
TO-247-3
Done fèy
SCT3080ALGC11.pdf
RoHs Status
Nan stok: 4199

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon SCT3080ALGC11 Tech
Rohm Semiconductor - SCT3080ALGC11 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - SCT3080ALGC11

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 5.6V @ 5mA  
Vgs (Max) +22V, -4V  
Teknoloji SiCFET (Silicon Carbide)  
Founisè Aparèy pake TO-247N  
Seri -  
Rds Sou (Max) @ Id, Vgs 104mOhm @ 10A, 18V  
Dissipasyon pouvwa (Max) 134W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 571 pF @ 500 V  
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 18 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 18V  
Drenaj Sous Voltage (Vdss) 650 V  
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc)  
Nimewo pwodwi baz SCT3080  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor SCT3080ALGC11.

Pwodwi atribi SCT3080ALGC11 SCT3040KLGC11 SCT30N120D2 SCT3030ALGC11
Nimewo Pati SCT3080ALGC11 SCT3040KLGC11 SCT30N120D2 SCT3030ALGC11
Manifakti Rohm Semiconductor Rohm Semiconductor STMicroelectronics Rohm Semiconductor
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 18 V 107 nC @ 18 V 105 nC @ 20 V 104 nC @ 18 V
Dissipasyon pouvwa (Max) 134W (Tc) 262W (Tc) 270W (Tc) 262W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Nimewo pwodwi baz SCT3080 SCT3040 SCT30 SCT3030
Rds Sou (Max) @ Id, Vgs 104mOhm @ 10A, 18V 52mOhm @ 20A, 18V 100mOhm @ 20A, 20V 39mOhm @ 27A, 18V
Vgs (Max) +22V, -4V +22V, -4V +25V, -10V +22V, -4V
Seri - - - -
Vgs (th) (Max) @ Id 5.6V @ 5mA 5.6V @ 10mA 3.5V @ 1mA 5.6V @ 13.3mA
Kapasite Antre (Ciss) (Max) @ Vds 571 pF @ 500 V 1337 pF @ 800 V 1700 pF @ 400 V 1526 pF @ 500 V
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 30A (Tc) 55A (Tc) 40A (Tc) 70A (Tc)
Pakèt Tube Tube Tray Tube
Teknoloji SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kondwi Voltage (Max Rds sou, Min Rds sou) 18V 18V 20V 18V
Founisè Aparèy pake TO-247N TO-247N HiP247™ TO-247N
Operating Tanperati 175°C (TJ) 175°C (TJ) -55°C ~ 200°C (TJ) 175°C (TJ)
Drenaj Sous Voltage (Vdss) 650 V 1200 V 1200 V 650 V

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Sètifikasyon & Manm

Wè plis
Rohm Semiconductor

SCT3080ALGC11

Rohm Semiconductor
32D-SCT3080ALGC11

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