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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySP8M10TB
SP8M10TB Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SP8M10TB - Rohm Semiconductor

Manifakti Nimewo Pati
SP8M10TB
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-SP8M10TB
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 30V 7A/4.5A 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SP8M10.pdf
RoHs Status
Nan stok: 4520

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SP8M10TB Tech
Rohm Semiconductor - SP8M10TB espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - SP8M10TB

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 25mOhm @ 7A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 600pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 8.4nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A, 4.5A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz SP8M10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor SP8M10TB.

Pwodwi atribi SP8M10TB SP8K80TB1 SP8K80 SP8M21-TB
Nimewo Pati SP8M10TB SP8K80TB1 SP8K80 SP8M21-TB
Manifakti Rohm Semiconductor Rohm Semiconductor LAPIS Technology VBSEMI
Vgs (th) (Max) @ Id 2.5V @ 1mA 5V @ 1mA - -
Drenaj Sous Voltage (Vdss) 30V 500V - -
Operating Tanperati 150°C (TJ) - - -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Pòtay Charge (Qg) (Max) @ Vgs 8.4nC @ 5V 3.8nC @ 10V - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Rds Sou (Max) @ Id, Vgs 25mOhm @ 7A, 10V 11.7Ohm @ 250mA, 10V - -
Seri - - - -
Mounting Kalite Surface Mount Surface Mount - -
Founisè Aparèy pake 8-SOP 8-SOP - -
Kapasite Antre (Ciss) (Max) @ Vds 600pF @ 10V 23.5pF @ 25V - -
Kouran - Kontini Drain (Id) @ 25 ° C 7A, 4.5A 500mA (Ta) - -
Pouvwa - Max 2W 2W (Ta) - -
Konfigirasyon N and P-Channel 2 N-Channel (Dual) - -
Nimewo pwodwi baz SP8M10 SP8K80 - -
FET Feature Logic Level Gate - - -

SP8M10TB fich PDF

Download SP8M10TB PDF fich ak dokiman Rohm Semiconductor pou SP8M10TB - Rohm Semiconductor.

Fich
SP8M10.pdf

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Sètifikasyon & Manm

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SP8M10TB Image

SP8M10TB

Rohm Semiconductor
32D-SP8M10TB

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