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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - Bipolè (BJT) - Array, Pre-BazeUMB3NTN
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

UMB3NTN - Rohm Semiconductor

Manifakti Nimewo Pati
UMB3NTN
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-UMB3NTN
ECAD modèl
Pati Deskripsyon
TRANS PREBIAS DUAL PNP UMT6
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
UMB3NTN.pdf
RoHs Status
Nan stok: 405550

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon UMB3NTN Tech
Rohm Semiconductor - UMB3NTN espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - UMB3NTN

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Pèseptè Emitter pann (Max) 50V  
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA  
Transistor Tip 2 PNP - Pre-Biased (Dual)  
Founisè Aparèy pake UMT6  
Seri -  
Rezistans - Emitter Sèvi (R2) -  
Rezistans - Sèvi (R1) 4.7kOhms  
Pouvwa - Max 150mW  
Pwodwi atribi Valè atribi  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pakèt Tape & Reel (TR)  
Mounting Kalite Surface Mount  
Frekans - Tranzisyon 250MHz  
DC aktyèl DC (HFE) (Min) @ Ic, Vce 100 @ 1mA, 5V  
Kouran - Koupe Cutè (Max) 500nA (ICBO)  
Kouran - Pèseptè (Ic) (Max) 100mA  
Nimewo pwodwi baz UMB3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor UMB3NTN.

Pwodwi atribi UMB3NTN UMB4NTN UMB8NTR UMB6NTR
Nimewo Pati UMB3NTN UMB4NTN UMB8NTR UMB6NTR
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Nimewo pwodwi baz UMB3 UMB4 UMB8 UMB6
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Rezistans - Sèvi (R1) 4.7kOhms 10kOhms 10kOhms 47kOhms
Transistor Tip 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
DC aktyèl DC (HFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 100 @ 1mA, 5V 100 @ 1mA, 5V 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA 300mV @ 1mA, 10mA 300mV @ 1mA, 10mA 300mV @ 500µA, 10mA
Founisè Aparèy pake UMT6 UMT6 UMT6 UMT6
Pouvwa - Max 150mW 150mW 150mW 150mW
Rezistans - Emitter Sèvi (R2) - - - 47kOhms
Kouran - Koupe Cutè (Max) 500nA (ICBO) - - 500nA
Seri - - - -
Kouran - Pèseptè (Ic) (Max) 100mA 100mA 100mA 30mA
Pake / Ka 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Voltage - Pèseptè Emitter pann (Max) 50V 50V 50V 50V
Frekans - Tranzisyon 250MHz 250MHz 250MHz 250MHz

UMB3NTN fich PDF

Download UMB3NTN PDF fich ak dokiman Rohm Semiconductor pou UMB3NTN - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf UMT6 Inner Structure.pdf UMT6 Part Marking.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf UMT6 Constitution Material List.pdf

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Sètifikasyon & Manm

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Rohm Semiconductor

UMB3NTN

Rohm Semiconductor
32D-UMB3NTN

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