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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - ArrayUMR12NTN
UMR12NTN Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

UMR12NTN - Rohm Semiconductor

Manifakti Nimewo Pati
UMR12NTN
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-UMR12NTN
ECAD modèl
Pati Deskripsyon
DIODE ARRAY GP 80V 100MA UMD6
Deskripsyon detaye
Pake
6-TSSOP, SC-88, SOT-363
Done fèy
UMR12NTN.pdf
RoHs Status
Nan stok: 245290

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon UMR12NTN Tech
Rohm Semiconductor - UMR12NTN espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - UMR12NTN

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 100 mA  
Voltage - DC ranvèse (Vr) (Max) 80 V  
Teknoloji Standard  
Founisè Aparèy pake UMD6  
Vitès Small Signal =< 200mA (Io), Any Speed  
Seri -  
Pake / Ka 6-TSSOP, SC-88, SOT-363  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 150°C (Max)  
Mounting Kalite Surface Mount  
Konte genyen dyod 2 Pair Series Connection  
Kouran - Reverse Leakage @ Vr 100 nA @ 80 V  
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 100mA  
Nimewo pwodwi baz UMR12  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor UMR12NTN.

Pwodwi atribi UMR12NTN PDS1240CTL-13 UMR11NTR RB088NS150FHTL
Nimewo Pati UMR12NTN PDS1240CTL-13 UMR11NTR RB088NS150FHTL
Manifakti Rohm Semiconductor Diodes Incorporated Rohm Semiconductor Rohm Semiconductor
Kouran - Reverse Leakage @ Vr 100 nA @ 80 V 350 µA @ 40 V 100 nA @ 70 V 15 µA @ 150 V
Nimewo pwodwi baz UMR12 PDS1240 UMR11 RB088
Voltage - Forward (Vf) (Max) @ Si 1.2 V @ 100 mA 520 mV @ 6 A 1.2 V @ 100 mA 880 mV @ 5 A
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Teknoloji Standard Schottky Standard Schottky
Vitès Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Pake / Ka 6-TSSOP, SC-88, SOT-363 PowerDI™ 5 6-TSSOP, SC-88, SOT-363 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Seri - - - Automotive, AEC-Q101
Kouran - Mwayèn rektifye (Io) (pou chak dyod) 100mA 6A 100mA 10A
Konte genyen dyod 2 Pair Series Connection 1 Pair Common Cathode 2 Pair CA + CC 1 Pair Common Cathode
Operating Tanperati - Junction 150°C (Max) -65°C ~ 150°C 150°C (Max) 150°C (Max)
Founisè Aparèy pake UMD6 PowerDI™ 5 UMD6 LPDS
Voltage - DC ranvèse (Vr) (Max) 80 V 40 V 80 V 150 V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount

UMR12NTN fich PDF

Download UMR12NTN PDF fich ak dokiman Rohm Semiconductor pou UMR12NTN - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Diode Flammability.pdf SW-SMD Reliability Test.pdf UMD6 Part Marking.pdf
Enfòmasyon sou anviwònman an
Diode Whisker Info.pdf Diode Level 1 MSL.pdf UMD6 Constitution Material List.pdf

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UMR12NTN Image

UMR12NTN

Rohm Semiconductor
32D-UMR12NTN

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