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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleCSD17573Q5BT
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CSD17573Q5BT - Texas Instruments

Manifakti Nimewo Pati
CSD17573Q5BT
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-CSD17573Q5BT
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 100A 8VSON
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
CSD17573Q5BT.pdf
RoHs Status
Nan stok: 23471

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Espesifikasyon

Espesifikasyon CSD17573Q5BT Tech
Texas Instruments - CSD17573Q5BT espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - CSD17573Q5BT

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 1.8V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-VSON-CLIP (5x6)  
Seri NexFET™  
Rds Sou (Max) @ Id, Vgs 1mOhm @ 35A, 10V  
Dissipasyon pouvwa (Max) 3.2W (Ta), 195W (Tc)  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 9000 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Ta)  
Nimewo pwodwi baz CSD17573Q5  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments CSD17573Q5BT.

Pwodwi atribi CSD17573Q5BT CSD17556Q5B CSD17571Q2 CSD17559Q5
Nimewo Pati CSD17573Q5BT CSD17556Q5B CSD17571Q2 CSD17559Q5
Manifakti Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Pòtay Charge (Qg) (Max) @ Vgs 64 nC @ 4.5 V 39 nC @ 4.5 V 3.1 nC @ 4.5 V 51 nC @ 4.5 V
Seri NexFET™ NexFET™ NexFET™ NexFET™
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz CSD17573Q5 CSD17556 CSD17571 CSD17559
Vgs (th) (Max) @ Id 1.8V @ 250µA 1.65V @ 250µA 2V @ 250µA 1.7V @ 250µA
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 3.2W (Ta), 195W (Tc) 3.1W (Ta), 191W (Tc) 2.5W (Ta) 3.2W (Ta), 96W (Tc)
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 30 V
Kapasite Antre (Ciss) (Max) @ Vds 9000 pF @ 15 V 7020 pF @ 15 V 468 pF @ 15 V 9200 pF @ 15 V
Kouran - Kontini Drain (Id) @ 25 ° C 100A (Ta) 34A (Ta), 100A (Tc) 22A (Ta) 40A (Ta), 100A (Tc)
Founisè Aparèy pake 8-VSON-CLIP (5x6) 8-VSON-CLIP (5x6) 6-SON (2x2) 8-VSON-CLIP (5x6)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Pake / Ka 8-PowerTDFN 8-PowerTDFN 6-WDFN Exposed Pad 8-PowerTDFN
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Rds Sou (Max) @ Id, Vgs 1mOhm @ 35A, 10V 1.4mOhm @ 40A, 10V 29mOhm @ 5A, 4.5V 1.15mOhm @ 40A, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel

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Sètifikasyon & Manm

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Texas Instruments

CSD17573Q5BT

Texas Instruments
32D-CSD17573Q5BT

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