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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayEFC4C002NLTDG
Texas Instruments
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

EFC4C002NLTDG - Texas Instruments

Manifakti Nimewo Pati
EFC4C002NLTDG
Manifakti
Texas Instruments
Allelco Nimewo Pati
32D-EFC4C002NLTDG
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR
Deskripsyon detaye
Pake
8-XFBGA, WLCSP
Done fèy
EFC4C002NLTDG.pdf
Nan stok: 4800

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon EFC4C002NLTDG Tech
Texas Instruments - EFC4C002NLTDG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Texas Instruments - EFC4C002NLTDG

Pwodwi atribi Valè atribi  
Manifakti Texas Instruments  
Vgs (th) (Max) @ Id 2.2V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-WLCSP (6x2.5)  
Seri -  
Rds Sou (Max) @ Id, Vgs -  
Pouvwa - Max 2.6W  
Pake / Ka 8-XFBGA, WLCSP  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 6200pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 45nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) -  
Kouran - Kontini Drain (Id) @ 25 ° C -  
Konfigirasyon 2 N-Channel (Dual) Common Drain  
Nimewo pwodwi baz EFC4C002  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Texas Instruments EFC4C002NLTDG.

Pwodwi atribi EFC4C002NLTDG EFC4C002NLTDG EFC4630R-TR EFC4C002NLTDG
Nimewo Pati EFC4C002NLTDG EFC4C002NLTDG EFC4630R-TR EFC4C002NLTDG
Manifakti Texas Instruments Fairchild Semiconductor onsemi onsemi
Pouvwa - Max 2.6W 2.6W 1.6W 2.6W
Pake / Ka 8-XFBGA, WLCSP 8-XFBGA, WLCSP 4-XFBGA 8-XFBGA, WLCSP
Konfigirasyon 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
Founisè Aparèy pake 8-WLCSP (6x2.5) 8-WLCSP (6x2.5) EFCP1313-4CC-037 8-WLCSP (6x2.5)
Vgs (th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 1.3V @ 1mA 2.2V @ 1mA
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate, 2.5V Drive Logic Level Gate
Drenaj Sous Voltage (Vdss) - - 24V -
Rds Sou (Max) @ Id, Vgs - - 45mOhm @ 3A, 4.5V -
Pakèt Bulk Bulk Bulk Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C - - 6A (Ta) -
Pòtay Charge (Qg) (Max) @ Vgs 45nC @ 4.5V 45nC @ 4.5V 7nC @ 4.5V 45nC @ 4.5V
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Nimewo pwodwi baz EFC4C002 EFC4C002 EFC4630 EFC4C002
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri - - - -
Kapasite Antre (Ciss) (Max) @ Vds 6200pF @ 15V 6200pF @ 15V - 6200pF @ 15V

Shipment

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Sètifikasyon & Manm

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Texas Instruments

EFC4C002NLTDG

Texas Instruments
32D-EFC4C002NLTDG

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