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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - Bipolè (BJT) - Single2N3997
Microchip Technology
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

2N3997 - Microchip Technology

Manifakti Nimewo Pati
2N3997
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-2N3997
ECAD modèl
Pati Deskripsyon
POWER BJT
Deskripsyon detaye
Pake
TO-111-4, Stud
Done fèy
2N3997.pdf
Nan stok: 176

Jaden obligatwa yo endike pa yon asterisk (*)
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Espesifikasyon

Espesifikasyon 2N3997 Tech
Microchip Technology - 2N3997 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - 2N3997

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Voltage - Pèseptè Emitter pann (Max) 80 V  
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A  
Transistor Tip NPN  
Founisè Aparèy pake TO-111  
Seri -  
Pouvwa - Max 2 W  
Pake / Ka TO-111-4, Stud  
Pwodwi atribi Valè atribi  
Pakèt Bulk  
Operating Tanperati -65°C ~ 200°C (TJ)  
Mounting Kalite Stud Mount  
Frekans - Tranzisyon -  
DC aktyèl DC (HFE) (Min) @ Ic, Vce 80 @ 1A, 2V  
Kouran - Koupe Cutè (Max) 10µA  
Kouran - Pèseptè (Ic) (Max) 10 A  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology 2N3997.

Pwodwi atribi 2N3997 2N3947 2N3964 2N3962
Nimewo Pati 2N3997 2N3947 2N3964 2N3962
Manifakti Microchip Technology Central Semiconductor Central Semiconductor onsemi
Kouran - Pèseptè (Ic) (Max) 10 A 200mA 200mA 200 mA
DC aktyèl DC (HFE) (Min) @ Ic, Vce 80 @ 1A, 2V 100 @ 10mA, 1V 250 @ 1mA, 5V 100 @ 1mA, 5V
Kouran - Koupe Cutè (Max) 10µA - 10nA 10nA
Voltage - Pèseptè Emitter pann (Max) 80 V 40V 45V 60 V
Transistor Tip NPN NPN PNP PNP
Pake / Ka TO-111-4, Stud TO-206AA, TO-18-3 Metal Can TO-206AA, TO-18-3 Metal Can TO-206AA, TO-18-3 Metal Can
Operating Tanperati -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -
Founisè Aparèy pake TO-111 TO-18 TO-18 TO-18
Pakèt Bulk - - Bulk
Seri - - - -
Pouvwa - Max 2 W 1.2W 360mW 360 mW
Frekans - Tranzisyon - 300MHz 50MHz -
Mounting Kalite Stud Mount Through Hole Through Hole Through Hole
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA

2N3997 fich PDF

Download 2N3997 PDF fich ak dokiman Microchip Technology pou 2N3997 - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

Shipment

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Sètifikasyon & Manm

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Microchip Technology

2N3997

Microchip Technology
32D-2N3997

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