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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAPL502J
APL502J Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APL502J - Microchip Technology

Manifakti Nimewo Pati
APL502J
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-APL502J
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 500V 52A ISOTOP
Deskripsyon detaye
Pake
SOT-227-4, miniBLOC
Done fèy
Power Products Catalog.pdf
RoHs Status
Nan stok: 599

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon APL502J Tech
Microchip Technology - APL502J espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - APL502J

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Vgs (th) (Max) @ Id 4V @ 2.5mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ISOTOP®  
Seri -  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 26A, 12V  
Dissipasyon pouvwa (Max) 568W (Tc)  
Pake / Ka SOT-227-4, miniBLOC  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds 9000 pF @ 25 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 15V  
Drenaj Sous Voltage (Vdss) 500 V  
Kouran - Kontini Drain (Id) @ 25 ° C 52A (Tc)  
Nimewo pwodwi baz APL502  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology APL502J.

Pwodwi atribi APL502J APL502LG APL5011AQBI-TRG APL5101-12BI
Nimewo Pati APL502J APL502LG APL5011AQBI-TRG APL5101-12BI
Manifakti Microchip Technology Microchip Technology ANPEC ANPEC
Vgs (th) (Max) @ Id 4V @ 2.5mA 4V @ 2.5mA - -
Fèt tip N-Channel N-Channel - -
Seri - - - -
Nimewo pwodwi baz APL502 APL502 - -
Mounting Kalite Chassis Mount Through Hole - -
Pakèt Tube Tube - -
Kouran - Kontini Drain (Id) @ 25 ° C 52A (Tc) 58A (Tc) - -
FET Feature - - - -
Kapasite Antre (Ciss) (Max) @ Vds 9000 pF @ 25 V 9000 pF @ 25 V - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Vgs (Max) ±30V ±30V - -
Drenaj Sous Voltage (Vdss) 500 V 500 V - -
Pake / Ka SOT-227-4, miniBLOC TO-264-3, TO-264AA - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 15V 15V - -
Dissipasyon pouvwa (Max) 568W (Tc) 730W (Tc) - -
Founisè Aparèy pake ISOTOP® TO-264 [L] - -
Rds Sou (Max) @ Id, Vgs 90mOhm @ 26A, 12V 90mOhm @ 29A, 12V - -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -

APL502J fich PDF

Download APL502J PDF fich ak dokiman Microchip Technology pou APL502J - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN Lòt
Integration 13/May/2020.pdf
Html fich
Power Products Catalog.pdf
Asanble PCN/orijin
Wafer Fab Site Chg 1/Mar/2017.pdf

Shipment

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Sètifikasyon & Manm

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APL502J Image

APL502J

Microchip Technology
32D-APL502J

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