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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAPT34F100B2
Microchip Technology
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APT34F100B2 - Microchip Technology

Manifakti Nimewo Pati
APT34F100B2
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-APT34F100B2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 1000V 35A T-MAX
Deskripsyon detaye
Pake
TO-247-3 Variant
Done fèy
Power Products Catalog.pdf
RoHs Status
Nan stok: 1896

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Espesifikasyon

Espesifikasyon APT34F100B2 Tech
Microchip Technology - APT34F100B2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - APT34F100B2

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Vgs (th) (Max) @ Id 5V @ 2.5mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake T-MAX™ [B2]  
Seri POWER MOS 8™  
Rds Sou (Max) @ Id, Vgs 380mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 1135W (Tc)  
Pake / Ka TO-247-3 Variant  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 9835 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 305 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 1000 V  
Kouran - Kontini Drain (Id) @ 25 ° C 35A (Tc)  
Nimewo pwodwi baz APT34F100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology APT34F100B2.

Pwodwi atribi APT34F100B2 APT34M60B APT34M120J APT34F60B
Nimewo Pati APT34F100B2 APT34M60B APT34M120J APT34F60B
Manifakti Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Founisè Aparèy pake T-MAX™ [B2] TO-247 [B] SOT-227 TO-247 [B]
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
FET Feature - - - -
Vgs (th) (Max) @ Id 5V @ 2.5mA 5V @ 1mA 5V @ 2.5mA 5V @ 1mA
Vgs (Max) ±30V ±30V ±30V ±30V
Dissipasyon pouvwa (Max) 1135W (Tc) 624W (Tc) 960W (Tc) 624W (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 9835 pF @ 25 V 6640 pF @ 25 V 18200 pF @ 25 V 6640 pF @ 25 V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pake / Ka TO-247-3 Variant TO-247-3 SOT-227-4, miniBLOC TO-247-3
Pakèt Tube Tube Tube Tube
Rds Sou (Max) @ Id, Vgs 380mOhm @ 18A, 10V 190mOhm @ 17A, 10V 300mOhm @ 25A, 10V 210mOhm @ 17A, 10V
Mounting Kalite Through Hole Through Hole Chassis Mount Through Hole
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 305 nC @ 10 V 165 nC @ 10 V 560 nC @ 10 V 165 nC @ 10 V
Seri POWER MOS 8™ POWER MOS 8™ - -
Nimewo pwodwi baz APT34F100 APT34M60 APT34M120 APT34F60
Kouran - Kontini Drain (Id) @ 25 ° C 35A (Tc) 36A (Tc) 35A (Tc) 36A (Tc)
Drenaj Sous Voltage (Vdss) 1000 V 600 V 1200 V 600 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

APT34F100B2 fich PDF

Download APT34F100B2 PDF fich ak dokiman Microchip Technology pou APT34F100B2 - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN Lòt
Integration 13/May/2020.pdf
Html fich
Power Products Catalog.pdf
Asanble PCN/orijin
Fab Site 27/Jul/2022.pdf

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Microchip Technology

APT34F100B2

Microchip Technology
32D-APT34F100B2

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