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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayAPTM100A13DG
Microchip Technology
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APTM100A13DG - Microchip Technology

Manifakti Nimewo Pati
APTM100A13DG
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-APTM100A13DG
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 1000V 65A SP6
Deskripsyon detaye
Pake
SP6
Done fèy
APTM100A13DG.pdf
RoHs Status
Nan stok: 131

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon APTM100A13DG Tech
Microchip Technology - APTM100A13DG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - APTM100A13DG

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Vgs (th) (Max) @ Id 5V @ 6mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SP6  
Seri -  
Rds Sou (Max) @ Id, Vgs 156mOhm @ 32.5A, 10V  
Pouvwa - Max 1250W  
Pake / Ka SP6  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds 15200pF @ 25V  
Pòtay Charge (Qg) (Max) @ Vgs 562nC @ 10V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 1000V (1kV)  
Kouran - Kontini Drain (Id) @ 25 ° C 65A  
Konfigirasyon 2 N-Channel (Half Bridge)  
Nimewo pwodwi baz APTM100  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology APTM100A13DG.

Pwodwi atribi APTM100A13DG APTM10AM02FG APTM100A13SG APTH020A0X3-SRZ
Nimewo Pati APTM100A13DG APTM10AM02FG APTM100A13SG APTH020A0X3-SRZ
Manifakti Microchip Technology Microchip Technology Microchip Technology ABB Power Electronics Inc.
Drenaj Sous Voltage (Vdss) 1000V (1kV) 100V 1000V (1kV) -
Kapasite Antre (Ciss) (Max) @ Vds 15200pF @ 25V 40000pF @ 25V 15200pF @ 25V -
Nimewo pwodwi baz APTM100 APTM10 APTM100 -
Founisè Aparèy pake SP6 SP6 SP6 -
Seri - - - TLynx™
Mounting Kalite Chassis Mount Chassis Mount Chassis Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 562nC @ 10V 1360nC @ 10V 562nC @ 10V -
Konfigirasyon 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge) -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Pake / Ka SP6 SP6 SP6 10-SMD Module
Kouran - Kontini Drain (Id) @ 25 ° C 65A 495A 65A -
Rds Sou (Max) @ Id, Vgs 156mOhm @ 32.5A, 10V 2.5mOhm @ 200A, 10V 156mOhm @ 32.5A, 10V -
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 85°C
FET Feature - - - -
Pakèt Bulk Bulk Bulk Tape & Reel (TR)
Vgs (th) (Max) @ Id 5V @ 6mA 4V @ 10mA 5V @ 6mA -
Pouvwa - Max 1250W 1250W 1250W -

APTM100A13DG fich PDF

Download APTM100A13DG PDF fich ak dokiman Microchip Technology pou APTM100A13DG - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN Lòt
Integration 13/May/2020.pdf
Asanble PCN/orijin
Assembly Site 27/Jan/2023.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Microchip Technology

APTM100A13DG

Microchip Technology
32D-APTM100A13DG

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