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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleJANS1N5822US
Microchip Technology
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

JANS1N5822US - Microchip Technology

Manifakti Nimewo Pati
JANS1N5822US
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-JANS1N5822US
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 40V 3A B SQ-MELF
Deskripsyon detaye
Pake
SQ-MELF, B
Done fèy
JANS1N5822US.pdf
Nan stok: 165

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Kantite

Espesifikasyon

Espesifikasyon JANS1N5822US Tech
Microchip Technology - JANS1N5822US espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - JANS1N5822US

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 3 A  
Voltage - DC ranvèse (Vr) (Max) 40 V  
Teknoloji Schottky  
Founisè Aparèy pake B, SQ-MELF  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Military, MIL-PRF-19500/620  
Pwodwi atribi Valè atribi  
Pake / Ka SQ-MELF, B  
Pakèt Bulk  
Operating Tanperati - Junction -65°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Mwayèn Rectified (Io) 3A  
Kapasite @ Vr, F -  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology JANS1N5822US.

Pwodwi atribi JANS1N5822US JANS1N5615US JANS1N5811US JANS1N6642UBD
Nimewo Pati JANS1N5822US JANS1N5615US JANS1N5811US JANS1N6642UBD
Manifakti Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Operating Tanperati - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -
Voltage - DC ranvèse (Vr) (Max) 40 V 200 V 150 V -
Teknoloji Schottky Standard Standard Standard
Kapasite @ Vr, F - - - 5pF @ 0V, 1MHz
Seri Military, MIL-PRF-19500/620 - - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka SQ-MELF, B SQ-MELF, A SQ-MELF, B 4-SMD, No Lead
Pakèt Bulk Bulk Bulk Bulk
Kouran - Mwayèn Rectified (Io) 3A 1A 3A -
Founisè Aparèy pake B, SQ-MELF A, SQ-MELF B, SQ-MELF UB
Voltage - Forward (Vf) (Max) @ Si 500 mV @ 3 A 1.6 V @ 3 A 875 mV @ 4 A 1.2 V @ 100 mA

JANS1N5822US fich PDF

Download JANS1N5822US PDF fich ak dokiman Microchip Technology pou JANS1N5822US - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
Asanble PCN/orijin
Manufacturing Change 23/Feb/2021.pdf

Shipment

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Sètifikasyon & Manm

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Microchip Technology

JANS1N5822US

Microchip Technology
32D-JANS1N5822US

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