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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - Bipolè (BJT) - SingleJANTX2N3019S
JANTX2N3019S Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

JANTX2N3019S - Microchip Technology

Manifakti Nimewo Pati
JANTX2N3019S
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-JANTX2N3019S
ECAD modèl
Pati Deskripsyon
TRANS NPN 80V 1A TO39
Deskripsyon detaye
Pake
TO-205AD, TO-39-3 Metal Can
Done fèy
JANTX2N3019S.pdf
Nan stok: 4303

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Espesifikasyon

Espesifikasyon JANTX2N3019S Tech
Microchip Technology - JANTX2N3019S espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - JANTX2N3019S

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Voltage - Pèseptè Emitter pann (Max) 80 V  
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA  
Transistor Tip NPN  
Founisè Aparèy pake TO-39  
Seri Military, MIL-PRF-19500/391  
Pouvwa - Max 800 mW  
Pake / Ka TO-205AD, TO-39-3 Metal Can  
Pwodwi atribi Valè atribi  
Pakèt Bulk  
Operating Tanperati -65°C ~ 200°C (TJ)  
Mounting Kalite Through Hole  
Frekans - Tranzisyon -  
DC aktyèl DC (HFE) (Min) @ Ic, Vce 50 @ 500mA, 10V  
Kouran - Koupe Cutè (Max) 10µA (ICBO)  
Kouran - Pèseptè (Ic) (Max) 1 A  
Nimewo pwodwi baz 2N3019  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology JANTX2N3019S.

Pwodwi atribi JANTX2N3019S JANTX2N3019S JANTX2N2484UB JANTX2N2907AUB
Nimewo Pati JANTX2N3019S JANTX2N3019S JANTX2N2484UB JANTX2N2907AUB
Manifakti Microchip Technology onsemi Microchip Technology Microchip Technology
Transistor Tip NPN NPN NPN PNP
DC aktyèl DC (HFE) (Min) @ Ic, Vce 50 @ 500mA, 10V 50 @ 500mA, 10V 225 @ 10mA, 5V 100 @ 150mA, 10V
Seri Military, MIL-PRF-19500/391 Military, MIL-PRF-19500/391 Military, MIL-PRF-19500/376 Military, MIL-PRF-19500/291
Nimewo pwodwi baz 2N3019 2N3019 2N2484 2N2907
Pakèt Bulk Bulk Bulk Bulk
Kouran - Koupe Cutè (Max) 10µA (ICBO) 10nA 2nA 50nA
Pake / Ka TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can 3-SMD, No Lead 4-SMD, No Lead
Founisè Aparèy pake TO-39 TO-39 UB UB
Kouran - Pèseptè (Ic) (Max) 1 A 1 A 50 mA 600 mA
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Operating Tanperati -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Voltage - Pèseptè Emitter pann (Max) 80 V 80 V 60 V 60 V
Pouvwa - Max 800 mW 800 mW 360 mW 500 mW
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 300mV @ 100µA, 1mA 1.6V @ 50mA, 500mA
Frekans - Tranzisyon - - - -

JANTX2N3019S fich PDF

Download JANTX2N3019S PDF fich ak dokiman Microchip Technology pou JANTX2N3019S - Microchip Technology.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
Asanble PCN/orijin
Manufacturing Change 23/Feb/2021.pdf

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JANTX2N3019S

Microchip Technology
32D-JANTX2N3019S

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