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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTN2640LG-G
TN2640LG-G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TN2640LG-G - Microchip Technology

Manifakti Nimewo Pati
TN2640LG-G
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-TN2640LG-G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 400V 260MA 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
TN2640LG-G.pdf
RoHs Status
Nan stok: 23247

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TN2640LG-G Tech
Microchip Technology - TN2640LG-G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - TN2640LG-G

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Vgs (th) (Max) @ Id 2V @ 2mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri -  
Rds Sou (Max) @ Id, Vgs 5Ohm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 1.3W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 225 pF @ 25 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 400 V  
Kouran - Kontini Drain (Id) @ 25 ° C 260mA (Tj)  
Nimewo pwodwi baz TN2640  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology TN2640LG-G.

Pwodwi atribi TN2640LG-G TN2540N3-G TN2540N8-G TN28F020-150
Nimewo Pati TN2640LG-G TN2540N3-G TN2540N8-G TN28F020-150
Manifakti Microchip Technology Microchip Technology Microchip Technology Rochester Electronics, LLC
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Founisè Aparèy pake 8-SOIC TO-92-3 TO-243AA (SOT-89) -
Vgs (th) (Max) @ Id 2V @ 2mA 2V @ 1mA 2V @ 1mA -
Nimewo pwodwi baz TN2640 TN2540 TN2540 -
Drenaj Sous Voltage (Vdss) 400 V 400 V 400 V -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) TO-226-3, TO-92-3 (TO-226AA) TO-243AA -
Kouran - Kontini Drain (Id) @ 25 ° C 260mA (Tj) 175mA (Tj) 260mA (Tj) -
FET Feature - - - -
Dissipasyon pouvwa (Max) 1.3W (Ta) 1W (Ta) 1.6W (Ta) -
Seri - - - *
Kapasite Antre (Ciss) (Max) @ Vds 225 pF @ 25 V 125 pF @ 25 V 125 pF @ 25 V -
Mounting Kalite Surface Mount Through Hole Surface Mount -
Fèt tip N-Channel N-Channel N-Channel -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Vgs (Max) ±20V ±20V ±20V -
Rds Sou (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 12Ohm @ 500mA, 10V 12Ohm @ 500mA, 10V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Pakèt Tape & Reel (TR) Bag Tape & Reel (TR) Bulk

TN2640LG-G fich PDF

Download TN2640LG-G PDF fich ak dokiman Microchip Technology pou TN2640LG-G - Microchip Technology.

PCN anbalaj
Label and Packing Changes 23/Sep/2015.pdf Packing Changes 10/Oct/2016.pdf
Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf

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Sètifikasyon & Manm

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TN2640LG-G Image

TN2640LG-G

Microchip Technology
32D-TN2640LG-G

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