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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTN5335K1-G
Microchip Technology
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TN5335K1-G - Microchip Technology

Manifakti Nimewo Pati
TN5335K1-G
Manifakti
Microchip Technology
Allelco Nimewo Pati
32D-TN5335K1-G
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 350V 110MA SOT23
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
TN5335K1-G.pdf
RoHs Status
Nan stok: 54240

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Espesifikasyon

Espesifikasyon TN5335K1-G Tech
Microchip Technology - TN5335K1-G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microchip Technology - TN5335K1-G

Pwodwi atribi Valè atribi  
Manifakti Microchip Technology  
Vgs (th) (Max) @ Id 2V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23 (TO-236AB)  
Seri -  
Rds Sou (Max) @ Id, Vgs 15Ohm @ 200mA, 10V  
Dissipasyon pouvwa (Max) 360mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 110 pF @ 25 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 3V, 10V  
Drenaj Sous Voltage (Vdss) 350 V  
Kouran - Kontini Drain (Id) @ 25 ° C 110mA (Tj)  
Nimewo pwodwi baz TN5335  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microchip Technology TN5335K1-G.

Pwodwi atribi TN5335K1-G TN5325N3-G TN5325K1-G TN5325N8-G
Nimewo Pati TN5335K1-G TN5325N3-G TN5325K1-G TN5325N8-G
Manifakti Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Kondwi Voltage (Max Rds sou, Min Rds sou) 3V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 110mA (Tj) 215mA (Ta) 150mA (Ta) 316mA (Tj)
Operating Tanperati -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TA) -
Kapasite Antre (Ciss) (Max) @ Vds 110 pF @ 25 V 110 pF @ 25 V 110 pF @ 25 V 110 pF @ 25 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Seri - - - -
Pakèt Tape & Reel (TR) Bag Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 360mW (Ta) 740mW (Ta) 360mW (Ta) 1.6W (Ta)
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Founisè Aparèy pake SOT-23 (TO-236AB) TO-92-3 TO-236AB (SOT23) TO-243AA (SOT-89)
Rds Sou (Max) @ Id, Vgs 15Ohm @ 200mA, 10V 7Ohm @ 1A, 10V 7Ohm @ 1A, 10V 7Ohm @ 1A, 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Nimewo pwodwi baz TN5335 TN5325 TN5325 TN5325
Drenaj Sous Voltage (Vdss) 350 V 250 V 250 V 250 V
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-226-3, TO-92-3 (TO-226AA) TO-236-3, SC-59, SOT-23-3 TO-243AA
Mounting Kalite Surface Mount Through Hole Surface Mount Surface Mount

TN5335K1-G fich PDF

Download TN5335K1-G PDF fich ak dokiman Microchip Technology pou TN5335K1-G - Microchip Technology.

PCN anbalaj
Label and Packing Changes 23/Sep/2015.pdf Packing Changes 10/Oct/2016.pdf
Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
PCN konsepsyon/spesifikasyon
TN5335 03/Sep/2021.pdf

Shipment

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Sètifikasyon & Manm

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Microchip Technology

TN5335K1-G

Microchip Technology
32D-TN5335K1-G

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