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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleAPT31N60BCSG
Microsemi Corporation
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

APT31N60BCSG - Microsemi Corporation

Manifakti Nimewo Pati
APT31N60BCSG
Manifakti
Microsemi
Allelco Nimewo Pati
32D-APT31N60BCSG
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 31A TO247-3
Deskripsyon detaye
Pake
TO-247-3
Done fèy
APT31N60BCS(G).pdf
Nan stok: 4440

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Espesifikasyon

Espesifikasyon APT31N60BCSG Tech
Microsemi Corporation - APT31N60BCSG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Microsemi Corporation - APT31N60BCSG

Pwodwi atribi Valè atribi  
Manifakti Microsemi  
Vgs (th) (Max) @ Id 3.9V @ 1.2mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247-3  
Seri CoolMOS™  
Rds Sou (Max) @ Id, Vgs 100mOhm @ 18A, 10V  
Dissipasyon pouvwa (Max) 255W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 3055 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 85 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 31A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Microsemi Corporation APT31N60BCSG.

Pwodwi atribi APT31N60BCSG APT31N80JC3 APT30M70BVRG APT31N90JC3
Nimewo Pati APT31N60BCSG APT31N80JC3 APT30M70BVRG APT31N90JC3
Manifakti Microsemi Corporation Microsemi Corporation Microchip Technology Microsemi
Mounting Kalite Through Hole Chassis Mount Through Hole -
Fèt tip N-Channel N-Channel N-Channel -
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 100mOhm @ 18A, 10V 145mOhm @ 22A, 10V 70mOhm @ 500mA, 10V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Pake / Ka TO-247-3 SOT-227-4, miniBLOC TO-247-3 -
Founisè Aparèy pake TO-247-3 ISOTOP® TO-247 [B] -
Kouran - Kontini Drain (Id) @ 25 ° C 31A (Tc) 31A (Tc) 48A (Tc) -
Drenaj Sous Voltage (Vdss) 600 V 800 V 300 V -
Pòtay Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 355 nC @ 10 V 225 nC @ 10 V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V -
Pakèt Tube Tube Tube -
Kapasite Antre (Ciss) (Max) @ Vds 3055 pF @ 25 V 4510 pF @ 25 V 5870 pF @ 25 V -
Dissipasyon pouvwa (Max) 255W (Tc) 833W (Tc) 370W (Tc) -
Vgs (Max) ±30V ±20V ±30V -
Seri CoolMOS™ CoolMOS™ POWER MOS V® -
Vgs (th) (Max) @ Id 3.9V @ 1.2mA 3.9V @ 2mA 4V @ 1mA -

APT31N60BCSG fich PDF

Download APT31N60BCSG PDF fich ak dokiman Microsemi Corporation pou APT31N60BCSG - Microsemi Corporation.

Enfòmasyon sou anviwònman an
Microchip CA Prop65.pdf Microchip REACH.pdf Microchip RoHS.pdf
Fich
APT31N60BCS(G).pdf

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Sètifikasyon & Manm

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Microsemi Corporation

APT31N60BCSG

Microsemi Corporation
32D-APT31N60BCSG

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