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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayPMDPB70EN,115
PMDPB70EN,115 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PMDPB70EN,115 - Nexperia USA Inc.

Manifakti Nimewo Pati
PMDPB70EN,115
Manifakti
Nexperia
Allelco Nimewo Pati
32D-PMDPB70EN,115
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 3.5A 6DFN
Deskripsyon detaye
Pake
6-UFDFN Exposed Pad
Done fèy
PMDPB70EN.pdf
RoHs Status
Nan stok: 5050

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon PMDPB70EN,115 Tech
Nexperia USA Inc. - PMDPB70EN,115 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Nexperia USA Inc. - PMDPB70EN,115

Pwodwi atribi Valè atribi  
Manifakti Nexperia  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 6-HUSON (2x2)  
Seri -  
Rds Sou (Max) @ Id, Vgs 57mOhm @ 3.5A, 10V  
Pouvwa - Max 510mW  
Pake / Ka 6-UFDFN Exposed Pad  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 130pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 4.5nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 3.5A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz PMDPB70  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Nexperia USA Inc. PMDPB70EN,115.

Pwodwi atribi PMDPB70EN,115 PMDPB70EN,115 PMDPB58UPE,115 PMDPB80XP,115
Nimewo Pati PMDPB70EN,115 PMDPB70EN,115 PMDPB58UPE,115 PMDPB80XP,115
Manifakti Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate, 1.8V Drive
Nimewo pwodwi baz PMDPB70 PMDPB70 PMDPB58 PMDPB80
Founisè Aparèy pake 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2) 6-HUSON (2x2)
Rds Sou (Max) @ Id, Vgs 57mOhm @ 3.5A, 10V 57mOhm @ 3.5A, 10V 67mOhm @ 2A, 4.5V 102mOhm @ 2.7A, 4.5V
Pòtay Charge (Qg) (Max) @ Vgs 4.5nC @ 10V 4.5nC @ 10V 9.5nC @ 4.5V 8.6nC @ 4.5V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pouvwa - Max 510mW 510mW 515mW 485mW
Pake / Ka 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 30V 30V 20V 20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 130pF @ 15V 130pF @ 15V 804pF @ 10V 550pF @ 10V
Seri - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 3.5A 3.5A 3.6A 2.7A
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 950mV @ 250µA 1V @ 250µA

PMDPB70EN,115 fich PDF

Download PMDPB70EN,115 PDF fich ak dokiman Nexperia USA Inc. pou PMDPB70EN,115 - Nexperia USA Inc..

PCN anbalaj
All Dev Label Chgs 2/Aug/2020.pdf
PCN obsolescence/ eol
Multiple Devices 29/Dec/2014.pdf
Fich
PMDPB70EN.pdf

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PMDPB70EN,115 Image

PMDPB70EN,115

Nexperia USA Inc.
32D-PMDPB70EN,115

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