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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SinglePMEG3010EB,115
PMEG3010EB,115 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PMEG3010EB,115 - Nexperia USA Inc.

Manifakti Nimewo Pati
PMEG3010EB,115
Manifakti
Nexperia
Allelco Nimewo Pati
32D-PMEG3010EB,115
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 30V 1A SOD523
Deskripsyon detaye
Pake
SC-79, SOD-523
Done fèy
SOD523 Packing Information.pdf
SOD523 Packing Information.pdf
PMEG3010EB.pdf
RoHs Status
Nan stok: 320710

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon PMEG3010EB,115 Tech
Nexperia USA Inc. - PMEG3010EB,115 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Nexperia USA Inc. - PMEG3010EB,115

Pwodwi atribi Valè atribi  
Manifakti Nexperia  
Voltage - Forward (Vf) (Max) @ Si 680 mV @ 1 A  
Voltage - DC ranvèse (Vr) (Max) 30 V  
Teknoloji Schottky  
Founisè Aparèy pake SOD-523  
Vitès Fast Recovery =< 500ns, > 200mA (Io)  
Seri Automotive, AEC-Q100  
Pake / Ka SC-79, SOD-523  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction 150°C (Max)  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 500 µA @ 30 V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F 30pF @ 1V, 1MHz  
Nimewo pwodwi baz PMEG3010  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Nexperia USA Inc. PMEG3010EB,115.

Pwodwi atribi PMEG3010EB,115 PMEG3010CEJ/DG PMEG3010BEV PMEG3010CEJ,115
Nimewo Pati PMEG3010EB,115 PMEG3010CEJ/DG PMEG3010BEV PMEG3010CEJ,115
Manifakti Nexperia USA Inc. Freescale / NXP Semiconductors Freescale / NXP Semiconductors NXP Semiconductors
Mounting Kalite Surface Mount - - -
Pakèt Tape & Reel (TR) - - -
Pake / Ka SC-79, SOD-523 - - -
Voltage - Forward (Vf) (Max) @ Si 680 mV @ 1 A - - -
Kapasite @ Vr, F 30pF @ 1V, 1MHz - - -
Kouran - Mwayèn Rectified (Io) 1A - - -
Operating Tanperati - Junction 150°C (Max) - - -
Nimewo pwodwi baz PMEG3010 - - -
Teknoloji Schottky - - -
Vitès Fast Recovery =< 500ns, > 200mA (Io) - - -
Founisè Aparèy pake SOD-523 - - -
Voltage - DC ranvèse (Vr) (Max) 30 V - - -
Seri Automotive, AEC-Q100 - - -
Kouran - Reverse Leakage @ Vr 500 µA @ 30 V - - -

PMEG3010EB,115 fich PDF

Download PMEG3010EB,115 PDF fich ak dokiman Nexperia USA Inc. pou PMEG3010EB,115 - Nexperia USA Inc..

PCN anbalaj
All Dev Label Chgs 2/Aug/2020.pdf Label Chg 12/Mar/2017.pdf
Fich
SOD523 Packing Information.pdf PMEG3010EB.pdf
Html fich
SOD523 Packing Information.pdf
Asanble PCN/orijin
Mult Dev Wafer Chgs 1/Jan/2021.pdf
PCN konsepsyon/spesifikasyon
Mult Dev DS/Errata Chg 27/Feb/2021.pdf

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

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PMEG3010EB,115 Image

PMEG3010EB,115

Nexperia USA Inc.
32D-PMEG3010EB,115

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