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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SinglePMPB85ENEAX
Nexperia USA Inc.
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PMPB85ENEAX - Nexperia USA Inc.

Manifakti Nimewo Pati
PMPB85ENEAX
Manifakti
Nexperia
Allelco Nimewo Pati
32D-PMPB85ENEAX
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 3A DFN2020MD-6
Deskripsyon detaye
Pake
6-UDFN Exposed Pad
Done fèy
PMPB85ENEA.pdf
RoHs Status
Nan stok: 286150

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon PMPB85ENEAX Tech
Nexperia USA Inc. - PMPB85ENEAX espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Nexperia USA Inc. - PMPB85ENEAX

Pwodwi atribi Valè atribi  
Manifakti Nexperia  
Vgs (th) (Max) @ Id 2.7V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DFN2020MD-6  
Seri Automotive, AEC-Q100  
Rds Sou (Max) @ Id, Vgs 95mOhm @ 3A, 10V  
Dissipasyon pouvwa (Max) 1.6W (Ta), 15.6W (Tc)  
Pake / Ka 6-UDFN Exposed Pad  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 305 pF @ 30 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 3A (Ta)  
Nimewo pwodwi baz PMPB85  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Nexperia USA Inc. PMPB85ENEAX.

Pwodwi atribi PMPB85ENEAX PMPB48EPAX PMPB29XPEAX PMPB40SNA115
Nimewo Pati PMPB85ENEAX PMPB48EPAX PMPB29XPEAX PMPB40SNA115
Manifakti Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Seri Automotive, AEC-Q100 Automotive, AEC-Q101, TrenchMOS™ Automotive, AEC-Q101, TrenchMOS™ -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 4.5V, 10V
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake DFN2020MD-6 DFN2020MD-6 DFN2020MD-6 DFN2020MD-6
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 1V @ 250µA 3V @ 250µA
Pòtay Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V 26 nC @ 10 V 45 nC @ 4.5 V 24 nC @ 10 V
Nimewo pwodwi baz PMPB85 PMPB48 PMPB29 -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 305 pF @ 30 V 860 pF @ 15 V 2970 pF @ 10 V 612 pF @ 30 V
Drenaj Sous Voltage (Vdss) 60 V 30 V 20 V 60 V
Pake / Ka 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Fèt tip N-Channel P-Channel P-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 95mOhm @ 3A, 10V 50mOhm @ 4.7A, 10V 32.5mOhm @ 5A, 4.5V 43mOhm @ 4.8A, 10V
Vgs (Max) ±20V ±20V ±12V ±20V
Kouran - Kontini Drain (Id) @ 25 ° C 3A (Ta) 4.7A (Ta) 5A (Ta) 12.9A (Tc)
Dissipasyon pouvwa (Max) 1.6W (Ta), 15.6W (Tc) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Bulk

PMPB85ENEAX fich PDF

Download PMPB85ENEAX PDF fich ak dokiman Nexperia USA Inc. pou PMPB85ENEAX - Nexperia USA Inc..

PCN anbalaj
All Dev Label Chgs 2/Aug/2020.pdf Label Chg 12/Mar/2017.pdf
Fich
PMPB85ENEA.pdf

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Sètifikasyon & Manm

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Nexperia USA Inc.

PMPB85ENEAX

Nexperia USA Inc.
32D-PMPB85ENEAX

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