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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SinglePSMN6R3-120PS
Nexperia USA Inc.
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

PSMN6R3-120PS - Nexperia USA Inc.

Manifakti Nimewo Pati
PSMN6R3-120PS
Manifakti
Nexperia
Allelco Nimewo Pati
32D-PSMN6R3-120PS
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 120V 70A TO220AB
Deskripsyon detaye
Pake
TO-220-3
Done fèy
PSMN6R3-120PS.pdf
RoHs Status
Nan stok: 5190

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon PSMN6R3-120PS Tech
Nexperia USA Inc. - PSMN6R3-120PS espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Nexperia USA Inc. - PSMN6R3-120PS

Pwodwi atribi Valè atribi  
Manifakti Nexperia  
Vgs (th) (Max) @ Id 4V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-220AB  
Seri -  
Rds Sou (Max) @ Id, Vgs 6.7mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) 405W (Tc)  
Pake / Ka TO-220-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 11384 pF @ 60 V  
Pòtay Charge (Qg) (Max) @ Vgs 207.1 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 120 V  
Kouran - Kontini Drain (Id) @ 25 ° C 70A (Tc)  
Nimewo pwodwi baz PSMN6R3  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Nexperia USA Inc. PSMN6R3-120PS.

Pwodwi atribi PSMN6R3-120PS PSMN6R9-100YSFX PSMN6R3-120PS PSMN6R0-30YLDX
Nimewo Pati PSMN6R3-120PS PSMN6R9-100YSFX PSMN6R3-120PS PSMN6R0-30YLDX
Manifakti Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc.
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kouran - Kontini Drain (Id) @ 25 ° C 70A (Tc) 100A (Tc) 70A (Ta) 66A (Tc)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
Vgs (Max) ±20V ±20V ±20V ±20V
Pakèt Tube Tape & Reel (TR) Bulk Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs (th) (Max) @ Id 4V @ 1mA - 4V @ 1mA 2.2V @ 1mA
Drenaj Sous Voltage (Vdss) 120 V 100 V 120 V 30 V
Seri - - - -
Kapasite Antre (Ciss) (Max) @ Vds 11384 pF @ 60 V - 11384 pF @ 60 V 832 pF @ 15 V
Founisè Aparèy pake TO-220AB LFPAK56, Power-SO8 TO-220AB LFPAK56, Power-SO8
Pake / Ka TO-220-3 SC-100, SOT-669 TO-220-3 SC-100, SOT-669
Pòtay Charge (Qg) (Max) @ Vgs 207.1 nC @ 10 V 50.3 nC @ 10 V 207.1 nC @ 10 V 13.7 nC @ 10 V
Dissipasyon pouvwa (Max) 405W (Tc) 238W 405W (Ta) 47W (Tc)
Rds Sou (Max) @ Id, Vgs 6.7mOhm @ 25A, 10V - 6.7mOhm @ 25A, 10V 6mOhm @ 15A, 10V
FET Feature - - - -
Mounting Kalite Through Hole Surface Mount Through Hole Surface Mount
Operating Tanperati -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Nimewo pwodwi baz PSMN6R3 PSMN6R9 - PSMN6R0

PSMN6R3-120PS fich PDF

Download PSMN6R3-120PS PDF fich ak dokiman Nexperia USA Inc. pou PSMN6R3-120PS - Nexperia USA Inc..

PCN anbalaj
All Dev Label Chgs 2/Aug/2020.pdf Label Chg 12/Mar/2017.pdf
PCN konsepsyon/spesifikasyon
Mult Device Part Marking Add 30/Sep/2017.pdf
Fich
PSMN6R3-120PS.pdf
PCN obsolescence/ eol
Multiple Parts obs 30/Jun/2022.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
Nexperia USA Inc.

PSMN6R3-120PS

Nexperia USA Inc.
32D-PSMN6R3-120PS

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