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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleHAT2174H-EL-E
Renesas Electronics America Inc
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HAT2174H-EL-E - Renesas Electronics America Inc

Manifakti Nimewo Pati
HAT2174H-EL-E
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-HAT2174H-EL-E
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 20A LFPAK
Deskripsyon detaye
Pake
SC-100, SOT-669
Done fèy
HAT2174H-EL-E.pdf
RoHs Status
Nan stok: 3630

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon HAT2174H-EL-E Tech
Renesas Electronics America Inc - HAT2174H-EL-E espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - HAT2174H-EL-E

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Vgs (th) (Max) @ Id -  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake LFPAK  
Seri -  
Rds Sou (Max) @ Id, Vgs 27mOhm @ 10A, 10V  
Dissipasyon pouvwa (Max) 20W (Tc)  
Pake / Ka SC-100, SOT-669  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2280 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 8V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Ta)  
Nimewo pwodwi baz HAT2174  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc HAT2174H-EL-E.

Pwodwi atribi HAT2174H-EL-E HAT2173N-EL-E HAT2173H-EL-E HAT2175H-EL-E
Nimewo Pati HAT2174H-EL-E HAT2173N-EL-E HAT2173H-EL-E HAT2175H-EL-E
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Nimewo pwodwi baz HAT2174 - HAT2173 HAT2175
Kouran - Kontini Drain (Id) @ 25 ° C 20A (Ta) 25A (Ta) 25A (Ta) 15A (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V 61 nC @ 10 V 61 nC @ 10 V 21 nC @ 10 V
Drenaj Sous Voltage (Vdss) 100 V 100 V 100 V 100 V
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 27mOhm @ 10A, 10V 15.3mOhm @ 12.5A, 10V 15mOhm @ 12.5A, 10V 42mOhm @ 7.5A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 2280 pF @ 10 V 4350 pF @ 10 V 4350 pF @ 10 V 1445 pF @ 10 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 8V, 10V - 8V, 10V 8V, 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri - - - -
Vgs (th) (Max) @ Id - 6V @ 20mA 6V @ 20mA -
Founisè Aparèy pake LFPAK 8-LFPAK-iV LFPAK LFPAK
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Pakèt Tape & Reel (TR) Bulk Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 20W (Tc) 30W (Tc) 30W (Tc) 15W (Tc)
Pake / Ka SC-100, SOT-669 8-PowerSOIC (0.154", 3.90mm Width) SC-100, SOT-669 SC-100, SOT-669
Vgs (Max) ±20V - ±20V ±20V

HAT2174H-EL-E fich PDF

Download HAT2174H-EL-E PDF fich ak dokiman Renesas Electronics America Inc pou HAT2174H-EL-E - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Renesas Electronics America Inc

HAT2174H-EL-E

Renesas Electronics America Inc
32D-HAT2174H-EL-E

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