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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleHAT2197R-EL-E
HAT2197R-EL-E Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HAT2197R-EL-E - Renesas Electronics America Inc

Manifakti Nimewo Pati
HAT2197R-EL-E
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-HAT2197R-EL-E
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 16A 8SOP
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
HAT2197R-EL-E.pdf
RoHs Status
Nan stok: 3990

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon HAT2197R-EL-E Tech
Renesas Electronics America Inc - HAT2197R-EL-E espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - HAT2197R-EL-E

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Vgs (th) (Max) @ Id -  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 6.7mOhm @ 8A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2650 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta)  
Nimewo pwodwi baz HAT2197  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc HAT2197R-EL-E.

Pwodwi atribi HAT2197R-EL-E HAT2195R-EL-E HAT2198WP-EL-E HAT2196C-EL-E
Nimewo Pati HAT2197R-EL-E HAT2195R-EL-E HAT2198WP-EL-E HAT2196C-EL-E
Manifakti Renesas Electronics America Inc Renesas Renesas Electronics America Inc Renesas
Nimewo pwodwi baz HAT2197 - - -
FET Feature - - - -
Pakèt Tape & Reel (TR) Bulk Bulk Bulk
Kapasite Antre (Ciss) (Max) @ Vds 2650 pF @ 10 V 3400 pF @ 10 V - 270 pF @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Operating Tanperati 150°C (TJ) -55°C ~ 150°C - 150°C
Rds Sou (Max) @ Id, Vgs 6.7mOhm @ 8A, 10V 5.8mOhm @ 9A, 10V - 58mOhm @ 1.3A, 4.5V
Drenaj Sous Voltage (Vdss) 30 V 30 V - 20 V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - 6-SMD, Flat Leads
Pòtay Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 23 nC @ 4.5 V - 2.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V - ±12V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V - 2.5V, 4.5V
Vgs (th) (Max) @ Id - 2.5V @ 1mA - 1.4V @ 1mA
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W - 850mW (Ta)
Fèt tip N-Channel N-Channel - N-Channel
Founisè Aparèy pake 8-SOP 8-SOP - 6-CMFPAK
Seri - - * -
Mounting Kalite Surface Mount Surface Mount - Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 16A (Ta) 18A - 2.5A (Ta)

HAT2197R-EL-E fich PDF

Download HAT2197R-EL-E PDF fich ak dokiman Renesas Electronics America Inc pou HAT2197R-EL-E - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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HAT2197R-EL-E Image

HAT2197R-EL-E

Renesas Electronics America Inc
32D-HAT2197R-EL-E

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