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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateHIP6601BECB-T
HIP6601BECB-T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HIP6601BECB-T - Renesas Electronics America Inc

Manifakti Nimewo Pati
HIP6601BECB-T
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-HIP6601BECB-T
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Done fèy
HIP6601B, HIP6603B, HIP6604B.pdf
Nan stok: 16110

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon HIP6601BECB-T Tech
Renesas Electronics America Inc - HIP6601BECB-T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - HIP6601BECB-T

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Voltage - Pwovizyon pou 10.8V ~ 13.2V  
Founisè Aparèy pake 8-SOIC-EP  
Seri -  
Leve / tonbe tan (tip) 20ns, 20ns  
Pake / Ka 8-SOIC (0.154", 3.90mm Width) Exposed Pad  
Pakèt Tape & Reel (TR)  
Operating Tanperati 0°C ~ 125°C (TJ)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH -  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 15 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) -  
Chèn Kalite Synchronous  
Nimewo pwodwi baz HIP6601  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc HIP6601BECB-T.

Pwodwi atribi HIP6601BECB-T HIP6601CB HIP6601BECB HIP6601BCBZ
Nimewo Pati HIP6601BECB-T HIP6601CB HIP6601BECB HIP6601BCBZ
Manifakti Renesas Electronics America Inc Harris Corporation Intersil Renesas Electronics America Inc
Founisè Aparèy pake 8-SOIC-EP 8-SOIC 8-SOIC-EP 8-SOIC
Operating Tanperati 0°C ~ 125°C (TJ) 0°C ~ 85°C (TA) 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ)
Lojik Voltage - VIL, VIH - - - -
Pakèt Tape & Reel (TR) Bulk Tube Tube
Segondè Side Voltage - Max (Bootstrap) 15 V - 15 V 15 V
Kouran - Sòti Pik (Sous, Sink) - - - -
Kantite chofè 2 2 2 2
Pake / Ka 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154', 3.90mm Width)
Nimewo pwodwi baz HIP6601 HIP6601 HIP6601 HIP6601
Pòt tip N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Seri - - - -
Leve / tonbe tan (tip) 20ns, 20ns 20ns, 20ns 20ns, 20ns 20ns, 20ns
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kalite Antre Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Chèn Kalite Synchronous Independent Synchronous Synchronous
Voltage - Pwovizyon pou 10.8V ~ 13.2V 5V ~ 12V 10.8V ~ 13.2V 10.8V ~ 13.2V

HIP6601BECB-T fich PDF

Download HIP6601BECB-T PDF fich ak dokiman Renesas Electronics America Inc pou HIP6601BECB-T - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf
Fich
HIP6601B, HIP6603B, HIP6604B.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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HIP6601BECB-T Image

HIP6601BECB-T

Renesas Electronics America Inc
32D-HIP6601BECB-T

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