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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateHIP6602BCRZ-T
HIP6602BCRZ-T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HIP6602BCRZ-T - Renesas Electronics America Inc

Manifakti Nimewo Pati
HIP6602BCRZ-T
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-HIP6602BCRZ-T
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 16QFN
Deskripsyon detaye
Pake
16-VQFN Exposed Pad
Done fèy
HIP6602B.pdf
RoHs Status
Nan stok: 9880

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon HIP6602BCRZ-T Tech
Renesas Electronics America Inc - HIP6602BCRZ-T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - HIP6602BCRZ-T

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Voltage - Pwovizyon pou 10.8V ~ 13.2V  
Founisè Aparèy pake 16-QFN (5x5)  
Seri -  
Leve / tonbe tan (tip) 20ns, 20ns  
Pake / Ka 16-VQFN Exposed Pad  
Pakèt Tape & Reel (TR)  
Operating Tanperati 0°C ~ 125°C (TJ)  
Kantite chofè 4  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH -  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 15 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) -  
Chèn Kalite Synchronous  
Nimewo pwodwi baz HIP6602  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc HIP6602BCRZ-T.

Pwodwi atribi HIP6602BCRZ-T HIP6602BCB HIP6603BCBZ HIP6602BCRZ
Nimewo Pati HIP6602BCRZ-T HIP6602BCB HIP6603BCBZ HIP6602BCRZ
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Operating Tanperati 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ)
Founisè Aparèy pake 16-QFN (5x5) 14-SOIC 8-SOIC 16-QFN (5x5)
Pòt tip N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Pake / Ka 16-VQFN Exposed Pad 14-SOIC (0.154', 3.90mm Width) 8-SOIC (0.154', 3.90mm Width) 16-VQFN Exposed Pad
Nimewo pwodwi baz HIP6602 HIP6602 HIP6603 HIP6602
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Segondè Side Voltage - Max (Bootstrap) 15 V 15 V 15 V 15 V
Pakèt Tape & Reel (TR) Tube Tube Tray
Voltage - Pwovizyon pou 10.8V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V
Leve / tonbe tan (tip) 20ns, 20ns 20ns, 20ns 20ns, 20ns 20ns, 20ns
Chèn Kalite Synchronous Synchronous Synchronous Synchronous
Kalite Antre Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Kouran - Sòti Pik (Sous, Sink) - - - -
Seri - - - -
Lojik Voltage - VIL, VIH - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kantite chofè 4 4 2 4

HIP6602BCRZ-T fich PDF

Download HIP6602BCRZ-T PDF fich ak dokiman Renesas Electronics America Inc pou HIP6602BCRZ-T - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf
PCN obsolescence/ eol
Multiple Devices 10/Jun/2015.pdf
Fich
HIP6602B.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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HIP6602BCRZ-T Image

HIP6602BCRZ-T

Renesas Electronics America Inc
32D-HIP6602BCRZ-T

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