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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateISL6700IBZ-T
ISL6700IBZ-T Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

ISL6700IBZ-T - Renesas Electronics America Inc

Manifakti Nimewo Pati
ISL6700IBZ-T
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-ISL6700IBZ-T
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
ISL6700IBZ-T.pdf
RoHs Status
Nan stok: 15704

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon ISL6700IBZ-T Tech
Renesas Electronics America Inc - ISL6700IBZ-T espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - ISL6700IBZ-T

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Voltage - Pwovizyon pou 9V ~ 15V  
Founisè Aparèy pake 8-SOIC  
Seri -  
Leve / tonbe tan (tip) 5ns, 5ns  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Operating Tanperati -40°C ~ 125°C (TJ)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH 0.8V, 2.2V  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 80 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) 1.4A, 1.3A  
Chèn Kalite Independent  
Nimewo pwodwi baz ISL6700  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc ISL6700IBZ-T.

Pwodwi atribi ISL6700IBZ-T ISL6625ACRZ-T ISL6622CRZ-T ISL6622CRZ-TS2705
Nimewo Pati ISL6700IBZ-T ISL6625ACRZ-T ISL6622CRZ-T ISL6622CRZ-TS2705
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Seri - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Lojik Voltage - VIL, VIH 0.8V, 2.2V - - -
Chèn Kalite Independent Synchronous Synchronous Synchronous
Pòt tip N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Kantite chofè 2 2 2 2
Founisè Aparèy pake 8-SOIC 8-DFN (2x2) 10-DFN (3x3) 10-DFN (3x3)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-VFDFN Exposed Pad 10-VFDFN Exposed Pad 10-VFDFN Exposed Pad
Kouran - Sòti Pik (Sous, Sink) 1.4A, 1.3A -, 3A 1.25A, 2A 1.25A, 2A
Operating Tanperati -40°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) 0°C ~ 70°C (TA)
Leve / tonbe tan (tip) 5ns, 5ns 31ns, 18ns 26ns, 18ns 26ns, 18ns
Nimewo pwodwi baz ISL6700 ISL6625 ISL6622 ISL6622
Segondè Side Voltage - Max (Bootstrap) 80 V 36 V 36 V 36 V
Kalite Antre Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Voltage - Pwovizyon pou 9V ~ 15V 5.5V ~ 13.2V 6.8V ~ 13.2V 6.8V ~ 13.2V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tray
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge

ISL6700IBZ-T fich PDF

Download ISL6700IBZ-T PDF fich ak dokiman Renesas Electronics America Inc pou ISL6700IBZ-T - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf
Asanble PCN/orijin
Alternate Manufacturing Site 05/Feb/2014.pdf

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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Japon 4
Mwayennorian Pèp Izrayèl la 6
DHL & FedEx Shipment Chaj Referans
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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
ISL6700IBZ-T Image

ISL6700IBZ-T

Renesas Electronics America Inc
32D-ISL6700IBZ-T

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