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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleNP89N04PUK-E1-AY
NP89N04PUK-E1-AY Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

NP89N04PUK-E1-AY - Renesas Electronics America Inc

Manifakti Nimewo Pati
NP89N04PUK-E1-AY
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-NP89N04PUK-E1-AY
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 40V 90A TO263
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
NP89N04PUK-E1-AY.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 26267

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon NP89N04PUK-E1-AY Tech
Renesas Electronics America Inc - NP89N04PUK-E1-AY espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - NP89N04PUK-E1-AY

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-263  
Seri -  
Rds Sou (Max) @ Id, Vgs 2.95mOhm @ 45A, 5V  
Dissipasyon pouvwa (Max) 1.8W (Ta), 147W (Tc)  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 5850 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 102 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 40 V  
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc)  
Nimewo pwodwi baz NP89N04  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc NP89N04PUK-E1-AY.

Pwodwi atribi NP89N04PUK-E1-AY NP88N04KUG-E1-AY NP88N03KDG-E1-AZ NP88N03KDG MOS
Nimewo Pati NP89N04PUK-E1-AY NP88N04KUG-E1-AY NP88N03KDG-E1-AZ NP88N03KDG MOS
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics Corporation NEC
Vgs (Max) ±20V ±20V - -
Mounting Kalite Surface Mount Surface Mount - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V - -
Nimewo pwodwi baz NP89N04 - - -
Kouran - Kontini Drain (Id) @ 25 ° C 90A (Tc) 88A (Tc) - -
Seri - - - -
Fèt tip N-Channel N-Channel - -
Kapasite Antre (Ciss) (Max) @ Vds 5850 pF @ 25 V 15000 pF @ 25 V - -
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - -
Rds Sou (Max) @ Id, Vgs 2.95mOhm @ 45A, 5V 2.9mOhm @ 44A, 10V - -
Pòtay Charge (Qg) (Max) @ Vgs 102 nC @ 10 V 250 nC @ 10 V - -
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Founisè Aparèy pake TO-263 TO-263 (D²Pak) - -
Drenaj Sous Voltage (Vdss) 40 V 40 V - -
Vgs (th) (Max) @ Id 4V @ 250µA 4V @ 250µA - -
Dissipasyon pouvwa (Max) 1.8W (Ta), 147W (Tc) 1.8W (Ta), 200W (Tc) - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Operating Tanperati 175°C (TJ) 175°C (TJ) - -

NP89N04PUK-E1-AY fich PDF

Download NP89N04PUK-E1-AY PDF fich ak dokiman Renesas Electronics America Inc pou NP89N04PUK-E1-AY - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf

Shipment

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Sètifikasyon & Manm

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NP89N04PUK-E1-AY Image

NP89N04PUK-E1-AY

Renesas Electronics America Inc
32D-NP89N04PUK-E1-AY

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