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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayRJK0216DPA-00#J53
Renesas Electronics America Inc
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RJK0216DPA-00#J53 - Renesas Electronics America Inc

Manifakti Nimewo Pati
RJK0216DPA-00#J53
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-RJK0216DPA-00#J53
ECAD modèl
Pati Deskripsyon
POWER FIELD-EFFECT TRANSISTOR
Deskripsyon detaye
Pake
8-WFDFN
Done fèy
RJK0216DPA-00#J53.pdf
Nan stok: 31702

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Espesifikasyon

Espesifikasyon RJK0216DPA-00#J53 Tech
Renesas Electronics America Inc - RJK0216DPA-00#J53 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - RJK0216DPA-00#J53

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Vgs (th) (Max) @ Id -  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-DFN (5x6)  
Seri -  
Rds Sou (Max) @ Id, Vgs 9.2mOhm @ 7.5A, 10V  
Pouvwa - Max 10W, 20W  
Pake / Ka 8-WFDFN  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1130pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V  
FET Feature Logic Level Gate, 4.5V Drive  
Drenaj Sous Voltage (Vdss) 25V  
Kouran - Kontini Drain (Id) @ 25 ° C 15A, 32A  
Konfigirasyon 2 N-Channel (Half Bridge)  
Nimewo pwodwi baz RJK0216  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc RJK0216DPA-00#J53.

Pwodwi atribi RJK0216DPA-00#J53 RJK0230DPA-00#J5A RJK0226DNS-00#J5 RJK0216DPA-00-J53
Nimewo Pati RJK0216DPA-00#J53 RJK0230DPA-00#J5A RJK0226DNS-00#J5 RJK0216DPA-00-J53
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Nexperia USA Inc. Renesas Electronics Corporation
Kapasite Antre (Ciss) (Max) @ Vds 1130pF @ 10V 1650pF @ 10V 6020 pF @ 10 V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Kouran - Kontini Drain (Id) @ 25 ° C 15A, 32A 20A, 50A 40A (Ta) -
Pake / Ka 8-WFDFN 8-PowerVDFN 8-PowerVDFN -
Rds Sou (Max) @ Id, Vgs 9.2mOhm @ 7.5A, 10V 7mOhm @ 10A, 10V 2.8mOhm @ 20A, 8V -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Pouvwa - Max 10W, 20W 15W, 35W - -
Pòtay Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V 7.7nC @ 4.5V 8 nC @ 4.5 V -
Vgs (th) (Max) @ Id - - 2.5V @ 1mA -
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C -
Pakèt Bulk Bulk Bulk -
Konfigirasyon 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge) - -
FET Feature Logic Level Gate, 4.5V Drive Logic Level Gate - -
Drenaj Sous Voltage (Vdss) 25V 25V 25 V -
Founisè Aparèy pake 8-DFN (5x6) 8-WPAK-D 8-HVSON (3x3.3) -
Seri - - - -
Nimewo pwodwi baz RJK0216 RJK0230D - -

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Renesas Electronics America Inc

RJK0216DPA-00#J53

Renesas Electronics America Inc
32D-RJK0216DPA-00#J53

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