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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRJK03C0DPA-00#J53
Renesas Electronics America Inc
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RJK03C0DPA-00#J53 - Renesas Electronics America Inc

Manifakti Nimewo Pati
RJK03C0DPA-00#J53
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-RJK03C0DPA-00#J53
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 70A 8WPAK
Deskripsyon detaye
Pake
8-PowerWDFN
Done fèy
RJK03C0DPA-00#J53.pdf
Nan stok: 19327

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Espesifikasyon

Espesifikasyon RJK03C0DPA-00#J53 Tech
Renesas Electronics America Inc - RJK03C0DPA-00#J53 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - RJK03C0DPA-00#J53

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-WPAK  
Seri -  
Rds Sou (Max) @ Id, Vgs 2mOhm @ 35A, 10V  
Dissipasyon pouvwa (Max) 65W (Tc)  
Pake / Ka 8-PowerWDFN  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 11000 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 70A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc RJK03C0DPA-00#J53.

Pwodwi atribi RJK03C0DPA-00#J53 RJK03B9DNS-00#J5 RJK03B9DPA-00#J5A RJK03B9DPA-00#J53
Nimewo Pati RJK03C0DPA-00#J53 RJK03B9DNS-00#J5 RJK03B9DPA-00#J5A RJK03B9DPA-00#J53
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Vgs (th) (Max) @ Id 2.5V @ 1mA - - -
Pake / Ka 8-PowerWDFN - 8-PowerWDFN 8-PowerWDFN
Operating Tanperati - - 150°C (TJ) 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 70A (Ta) - 30A (Ta) 30A (Ta)
Dissipasyon pouvwa (Max) 65W (Tc) - 25W (Tc) 25W (Tc)
Seri - * - -
Fèt tip N-Channel - N-Channel N-Channel
Mounting Kalite Surface Mount - Surface Mount Surface Mount
Founisè Aparèy pake 8-WPAK - 8-WPAK 8-WPAK
Teknoloji MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss) 30 V - 30 V 30 V
Pakèt Bulk Bulk Bulk Bulk
Rds Sou (Max) @ Id, Vgs 2mOhm @ 35A, 10V - 10.6mOhm @ 15A, 10V 10.6mOhm @ 15A, 10V
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V - 7.4 nC @ 4.5 V 7.4 nC @ 4.5 V
Kapasite Antre (Ciss) (Max) @ Vds 11000 pF @ 10 V - 1110 pF @ 10 V 1110 pF @ 10 V

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Renesas Electronics America Inc

RJK03C0DPA-00#J53

Renesas Electronics America Inc
32D-RJK03C0DPA-00#J53

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