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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRJK2555DPA-00#J0
Renesas Electronics America Inc
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RJK2555DPA-00#J0 - Renesas Electronics America Inc

Manifakti Nimewo Pati
RJK2555DPA-00#J0
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-RJK2555DPA-00#J0
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 250V 17A 8WPAK
Deskripsyon detaye
Pake
8-PowerWDFN
Done fèy
RJK2555DPA-00#J0.pdf
RoHs Status
Nan stok: 5300

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Kantite

Espesifikasyon

Espesifikasyon RJK2555DPA-00#J0 Tech
Renesas Electronics America Inc - RJK2555DPA-00#J0 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - RJK2555DPA-00#J0

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Vgs (th) (Max) @ Id -  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-WPAK (3)  
Seri -  
Rds Sou (Max) @ Id, Vgs 104mOhm @ 8.5A, 10V  
Dissipasyon pouvwa (Max) 30W (Tc)  
Pake / Ka 8-PowerWDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 39 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 250 V  
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Ta)  
Nimewo pwodwi baz RJK2555  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc RJK2555DPA-00#J0.

Pwodwi atribi RJK2555DPA-00#J0 RJK2075DPA-00#J5A RJK2076DPA-00#J5A RJK2557DPA-00#J0
Nimewo Pati RJK2555DPA-00#J0 RJK2075DPA-00#J5A RJK2076DPA-00#J5A RJK2557DPA-00#J0
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Rds Sou (Max) @ Id, Vgs 104mOhm @ 8.5A, 10V 69mOhm @ 10A, 10V 85mOhm @ 10A, 10V 128mOhm @ 8.5A, 10V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 2400 pF @ 25 V 2200 pF @ 25 V 1200 pF @ 25 V 1250 pF @ 25 V
Nimewo pwodwi baz RJK2555 RJK2075 RJK2076 RJK2557
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka 8-PowerWDFN 8-PowerVDFN 8-PowerVDFN 8-PowerWDFN
Drenaj Sous Voltage (Vdss) 250 V 200 V 200 V 250 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake 8-WPAK (3) WPAK(3F) (5x6) WPAK(3F) (5x6) 8-WPAK (3)
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
FET Feature - - - -
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±30V ±30V ±30V ±30V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 10V
Seri - - - -
Pòtay Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 38 nC @ 10 V 19 nC @ 10 V 20 nC @ 10 V
Kouran - Kontini Drain (Id) @ 25 ° C 17A (Ta) 20A (Ta) 20A (Ta) 17A (Ta)
Dissipasyon pouvwa (Max) 30W (Tc) 65W (Ta) 65W (Tc) 30W (Tc)
Vgs (th) (Max) @ Id - - - -

RJK2555DPA-00#J0 fich PDF

Download RJK2555DPA-00#J0 PDF fich ak dokiman Renesas Electronics America Inc pou RJK2555DPA-00#J0 - Renesas Electronics America Inc.

PCN anbalaj
Label Change-All Devices 01/Dec/2022.pdf

Shipment

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Sètifikasyon & Manm

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Renesas Electronics America Inc

RJK2555DPA-00#J0

Renesas Electronics America Inc
32D-RJK2555DPA-00#J0

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