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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSTD100NH03LT4
STD100NH03LT4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

STD100NH03LT4 - STMicroelectronics

Manifakti Nimewo Pati
STD100NH03LT4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STD100NH03LT4
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 60A DPAK
Deskripsyon detaye
Pake
TO-252-3, DPak (2 Leads + Tab), SC-63
Done fèy
STD100NH03L.pdf
RoHs Status
Nan stok: 5430

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Espesifikasyon

Espesifikasyon STD100NH03LT4 Tech
STMicroelectronics - STD100NH03LT4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STD100NH03LT4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DPAK  
Seri STripFET™ III  
Rds Sou (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V  
Dissipasyon pouvwa (Max) 100W (Tc)  
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 4100 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 77 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc)  
Nimewo pwodwi baz STD10  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STD100NH03LT4.

Pwodwi atribi STD100NH03LT4 STD100N3LF3 STD10LN80K5 STD100N10F7
Nimewo Pati STD100NH03LT4 STD100N3LF3 STD10LN80K5 STD100N10F7
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Pòtay Charge (Qg) (Max) @ Vgs 77 nC @ 10 V 27 nC @ 5 V 15 nC @ 10 V 61 nC @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Drenaj Sous Voltage (Vdss) 30 V 30 V 800 V 100 V
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 60A (Tc) 80A (Tc) 8A (Tc) 80A (Tc)
Seri STripFET™ III STripFET™ II MDmesh™ K5 DeepGATE™, STripFET™ VII
Founisè Aparèy pake DPAK DPAK D-PAK (TO-252) DPAK
Nimewo pwodwi baz STD10 STD100 STD10 STD100
Kapasite Antre (Ciss) (Max) @ Vds 4100 pF @ 15 V 2060 pF @ 25 V 427 pF @ 100 V 4369 pF @ 50 V
Pake / Ka TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Rds Sou (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V 5.5mOhm @ 40A, 10V 630mOhm @ 4A, 10V 8mOhm @ 40A, 10V
Dissipasyon pouvwa (Max) 100W (Tc) 110W (Tc) 110W (Tc) 120W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
FET Feature - - - -
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 5V @ 100µA 4.5V @ 250µA
Vgs (Max) ±20V ±20V ±30V ±20V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 5V, 10V 5V, 10V 10V 10V

STD100NH03LT4 fich PDF

Download STD100NH03LT4 PDF fich ak dokiman STMicroelectronics pou STD100NH03LT4 - STMicroelectronics.

Fich
STD100NH03L.pdf

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STD100NH03LT4 Image

STD100NH03LT4

STMicroelectronics
32D-STD100NH03LT4

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