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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleSTGW30H60DFB
STGW30H60DFB Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

STGW30H60DFB - STMicroelectronics

Manifakti Nimewo Pati
STGW30H60DFB
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STGW30H60DFB
ECAD modèl
Pati Deskripsyon
IGBT 600V 60A 260W TO247
Pake
TO-247-3
Done fèy
STGW(T)30H60DFB.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 19333

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STGW30H60DFB Tech
STMicroelectronics - STGW30H60DFB espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STGW30H60DFB

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2V @ 15V, 30A  
Kondisyon tès 400V, 30A, 10Ohm, 15V  
Td (sou / sou) @ 25 ° C 37ns/146ns  
Oblije chanje enèji 383µJ (on), 293µJ (off)  
Founisè Aparèy pake TO-247  
Seri -  
Tan rekiperasyon ranvèse (trr) 53 ns  
Pouvwa - Max 260 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-247-3  
Pakèt Tube  
Operating Tanperati -55°C ~ 175°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite Trench Field Stop  
Gate Charge 149 nC  
Kouran - Pèseptè Pulsed (Icm) 120 A  
Kouran - Pèseptè (Ic) (Max) 60 A  
Nimewo pwodwi baz STGW30  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STGW30H60DFB.

Pwodwi atribi STGW30H60DFB STGW28IH125DF STGW30NC120HD STGW30H65FB
Nimewo Pati STGW30H60DFB STGW28IH125DF STGW30NC120HD STGW30H65FB
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Seri - - PowerMESH™ -
Pakèt Tube Tube Tube Tube
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Oblije chanje enèji 383µJ (on), 293µJ (off) 720µJ (off) 1.66mJ (on), 4.44mJ (off) 151µJ (on), 293µJ (off)
Nimewo pwodwi baz STGW30 STGW28 STGW30 STGW30
Vce (sou) (Max) @ Vge, Ic 2V @ 15V, 30A 2.5V @ 15V, 25A 2.75V @ 15V, 20A 2V @ 15V, 30A
Td (sou / sou) @ 25 ° C 37ns/146ns -/128ns 29ns/275ns 37ns/146ns
Kondisyon tès 400V, 30A, 10Ohm, 15V 600V, 25A, 10Ohm, 15V 960V, 20A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-247-3
Pouvwa - Max 260 W 375 W 220 W 260 W
Voltage - Pèseptè Emitter pann (Max) 600 V 1250 V 1200 V 650 V
Gate Charge 149 nC 114 nC 110 nC 149 nC
IGBT Kalite Trench Field Stop Trench Field Stop - Trench Field Stop
Founisè Aparèy pake TO-247 TO-247 TO-247-3 TO-247
Operating Tanperati -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Kalite Antre Standard Standard Standard Standard
Kouran - Pèseptè Pulsed (Icm) 120 A 120 A - 120 A
Tan rekiperasyon ranvèse (trr) 53 ns - 152 ns -
Kouran - Pèseptè (Ic) (Max) 60 A 60 A 60 A 30 A

STGW30H60DFB fich PDF

Download STGW30H60DFB PDF fich ak dokiman STMicroelectronics pou STGW30H60DFB - STMicroelectronics.

PCN konsepsyon/spesifikasyon
Mult Dev Adv Material Notice 8/Apr/2019.pdf
Asanble PCN/orijin
IGBT/IPM TFS A/T Add 22/Oct/2021.pdf
Fich
STGW(T)30H60DFB.pdf

Shipment

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STGW30H60DFB Image

STGW30H60DFB

STMicroelectronics
32D-STGW30H60DFB

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