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1N5401G - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
1N5401G
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-1N5401G
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 100V 3A DO201AD
Deskripsyon detaye
Pake
DO-201AD, Axial
Done fèy
1N5401G.pdf
RoHs Status
Nan stok: 204370

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Espesifikasyon

Espesifikasyon 1N5401G Tech
Taiwan Semiconductor Corporation - 1N5401G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - 1N5401G

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 3 A  
Voltage - DC ranvèse (Vr) (Max) 100 V  
Teknoloji Standard  
Founisè Aparèy pake DO-201AD  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri -  
Pwodwi atribi Valè atribi  
Pake / Ka DO-201AD, Axial  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Through Hole  
Kouran - Reverse Leakage @ Vr 5 µA @ 100 V  
Kouran - Mwayèn Rectified (Io) 3A  
Kapasite @ Vr, F 25pF @ 4V, 1MHz  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation 1N5401G.

Pwodwi atribi 1N5401G 1N5401 1N5401RLG 1N5402
Nimewo Pati 1N5401G 1N5401 1N5401RLG 1N5402
Manifakti Taiwan Semiconductor Corporation SMC Diode Solutions onsemi onsemi
Voltage - DC ranvèse (Vr) (Max) 100 V 100 V 100 V 200 V
Operating Tanperati - Junction -55°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -55°C ~ 150°C
Kouran - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V 10 µA @ 100 V 5 µA @ 200 V
Kouran - Mwayèn Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 3 A 1.2 V @ 3 A 1 V @ 3 A 1.2 V @ 3 A
Pake / Ka DO-201AD, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AD, Axial
Founisè Aparèy pake DO-201AD DO-201AD Axial DO-201AD
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Teknoloji Standard Standard Standard Standard
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Seri - - - -
Pakèt Tape & Reel (TR) Tape & Box (TB) Tape & Reel (TR) Tape & Reel (TR)
Kapasite @ Vr, F 25pF @ 4V, 1MHz 30pF @ 0V, 1MHz - 30pF @ 4V, 1MHz

1N5401G fich PDF

Download 1N5401G PDF fich ak dokiman Taiwan Semiconductor Corporation pou 1N5401G - Taiwan Semiconductor Corporation.

Nimewo pati PCN
Part Number Update 1/Jan/2021.pdf

Shipment

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1N5401G Image

1N5401G

Taiwan Semiconductor Corporation
32D-1N5401G

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