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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurKBU606G
KBU606G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

KBU606G - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
KBU606G
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-KBU606G
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1PHASE 800V 6A KBU
Deskripsyon detaye
Pake
4-SIP, KBU
Done fèy
KBU601G - KBU607G.pdf
RoHs Status
Nan stok: 22266

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon KBU606G Tech
Taiwan Semiconductor Corporation - KBU606G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - KBU606G

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Voltage - Peak Ranvèse (Max) 800 V  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 6 A  
Teknoloji Standard  
Founisè Aparèy pake KBU  
Seri -  
Pake / Ka 4-SIP, KBU  
Pwodwi atribi Valè atribi  
Pakèt Tray  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 5 µA @ 800 V  
Kouran - Mwayèn Rectified (Io) 6 A  
Nimewo pwodwi baz KBU606  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation KBU606G.

Pwodwi atribi KBU606G KBU4M-E4/51 KBU406G KBU406
Nimewo Pati KBU606G KBU4M-E4/51 KBU406G KBU406
Manifakti Taiwan Semiconductor Corporation Vishay General Semiconductor - Diodes Division Taiwan Semiconductor Corporation Yangzhou Yangjie Electronic Technology Co.,Ltd
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Mwayèn Rectified (Io) 6 A 4 A 4 A 4 A
Teknoloji Standard Standard Standard Standard
Seri - - - -
Kalite dyod Single Phase Single Phase Single Phase Single Phase
Operating Tanperati -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 6 A 1 V @ 4 A 1.1 V @ 4 A 1 V @ 2 A
Pakèt Tray Bulk Tray Box
Kouran - Reverse Leakage @ Vr 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 800 V 10 µA @ 600 V
Pake / Ka 4-SIP, KBU 4-SIP, KBU 4-SIP, KBU 4-ESIP, KBU
Voltage - Peak Ranvèse (Max) 800 V 1 kV 800 V 600 V
Founisè Aparèy pake KBU KBU KBU KBU
Nimewo pwodwi baz KBU606 KBU4 KBU406 -

KBU606G fich PDF

Download KBU606G PDF fich ak dokiman Taiwan Semiconductor Corporation pou KBU606G - Taiwan Semiconductor Corporation.

Nimewo pati PCN
Part Number Update 1/Jan/2021.pdf
PCN anbalaj
Mult Dev Pkg/PN Chgs 4/Feb/2021.pdf
Fich
KBU601G - KBU607G.pdf

Shipment

Tan livrezon

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Metòd livrezon

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Japon 4
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Kontakte nou si ou gen nenpòt kesyon.

  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
KBU606G Image

KBU606G

Taiwan Semiconductor Corporation
32D-KBU606G

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