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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurRABS15M REG
RABS15M REG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RABS15M REG - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
RABS15M REG
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-RABS15M REG
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1P 1KV 1.5A ABS-L
Deskripsyon detaye
Pake
4-SMD, Gull Wing
Done fèy
RABS15M.pdf
RoHs Status
Nan stok: 130550

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Kantite

Espesifikasyon

Espesifikasyon RABS15M REG Tech
Taiwan Semiconductor Corporation - RABS15M REG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - RABS15M REG

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Voltage - Peak Ranvèse (Max) 1 kV  
Voltage - Forward (Vf) (Max) @ Si 1 V @ 1.5 A  
Teknoloji Standard  
Founisè Aparèy pake ABS-L  
Seri -  
Pake / Ka 4-SMD, Gull Wing  
Pwodwi atribi Valè atribi  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 1 µA @ 1000 V  
Kouran - Mwayèn Rectified (Io) 1.5 A  
Nimewo pwodwi baz RABS15  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation RABS15M REG.

Pwodwi atribi RABS15M REG GBPC2506W GBPC3508 MB6S-E3/80
Nimewo Pati RABS15M REG GBPC2506W GBPC3508 MB6S-E3/80
Manifakti Taiwan Semiconductor Corporation Diodes Incorporated Fairchild Semiconductor Vishay General Semiconductor - Diodes Division
Seri - - - -
Teknoloji Standard Standard Standard Standard
Mounting Kalite Surface Mount Through Hole QC Terminal Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tape & Reel (TR) Tray Bulk Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ Si 1 V @ 1.5 A 1.1 V @ 12.5 A 1.1 V @ 17.5 A 1 V @ 400 mA
Voltage - Peak Ranvèse (Max) 1 kV 600 V 800 V 600 V
Kalite dyod Single Phase Single Phase Single Phase Single Phase
Kouran - Mwayèn Rectified (Io) 1.5 A 25 A 35 A 500 mA
Pake / Ka 4-SMD, Gull Wing 4-Square, GBPC-W 4-Square, GBPC TO-269AA, 4-BESOP
Nimewo pwodwi baz RABS15 GBPC2506 - MB6
Kouran - Reverse Leakage @ Vr 1 µA @ 1000 V 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 600 V
Founisè Aparèy pake ABS-L GBPC-W GBPC TO-269AA (MBS)

RABS15M REG fich PDF

Download RABS15M REG PDF fich ak dokiman Taiwan Semiconductor Corporation pou RABS15M REG - Taiwan Semiconductor Corporation.

Fich
RABS15M.pdf

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Sètifikasyon & Manm

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RABS15M REG Image

RABS15M REG

Taiwan Semiconductor Corporation
32D-RABS15M REG

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