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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Bridge rèktifikateurTS25PL06G
TS25PL06G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TS25PL06G - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TS25PL06G
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TS25PL06G
ECAD modèl
Pati Deskripsyon
BRIDGE RECT 1P 800V 25A TS-6P
Deskripsyon detaye
Pake
4-SIP, TS-6P
Done fèy
TS25PL05G, TS25PL06G.pdf
RoHs Status
Nan stok: 11619

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TS25PL06G Tech
Taiwan Semiconductor Corporation - TS25PL06G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TS25PL06G

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Voltage - Peak Ranvèse (Max) 800 V  
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 12.5 A  
Teknoloji Standard  
Founisè Aparèy pake TS-6P  
Seri -  
Pake / Ka 4-SIP, TS-6P  
Pwodwi atribi Valè atribi  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite dyod Single Phase  
Kouran - Reverse Leakage @ Vr 10 µA @ 800 V  
Kouran - Mwayèn Rectified (Io) 25 A  
Nimewo pwodwi baz TS25PL06  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TS25PL06G.

Pwodwi atribi TS25PL06G TS25P07G D2G TS25P05G TS25P06G
Nimewo Pati TS25PL06G TS25P07G D2G TS25P05G TS25P06G
Manifakti Taiwan Semiconductor Corporation TSC (Taiwan Semiconductor) Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Founisè Aparèy pake TS-6P TS-6P TS-6P TS-6P
Kalite dyod Single Phase Single Phase Single Phase Single Phase
Voltage - Forward (Vf) (Max) @ Si 950 mV @ 12.5 A 1.1V @ 1.5A 1.1 V @ 15 A 1.1 V @ 15 A
Teknoloji Standard Standard Standard Standard
Pake / Ka 4-SIP, TS-6P 4-SIP, TS-6P 4-SIP, TS-6P 4-SIP, TS-6P
Pakèt Tube - Tube Tube
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Mwayèn Rectified (Io) 25 A 25A 25 A 25 A
Seri - - - -
Voltage - Peak Ranvèse (Max) 800 V 1kV 600 V 800 V
Nimewo pwodwi baz TS25PL06 - TS25P05 TS25P06
Kouran - Reverse Leakage @ Vr 10 µA @ 800 V 10µA @ 1000V 10 µA @ 600 V 10 µA @ 800 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole

TS25PL06G fich PDF

Download TS25PL06G PDF fich ak dokiman Taiwan Semiconductor Corporation pou TS25PL06G - Taiwan Semiconductor Corporation.

Nimewo pati PCN
Part Number Update 1/Jan/2021.pdf
PCN anbalaj
Mult Dev Pkg/PN Chgs 4/Feb/2021.pdf
PCN konsepsyon/spesifikasyon
TS-6P Design Improv 29/Apr/2019.pdf
Fich
TS25PL05G, TS25PL06G.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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TS25PL06G Image

TS25PL06G

Taiwan Semiconductor Corporation
32D-TS25PL06G

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