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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTSM2303CX RFG
TSM2303CX RFG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TSM2303CX RFG - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TSM2303CX RFG
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TSM2303CX RFG
ECAD modèl
Pati Deskripsyon
MOSFET P-CHANNEL 30V 1.3A SOT23
Deskripsyon detaye
Pake
TO-236-3, SC-59, SOT-23-3
Done fèy
TSM2303.pdf
RoHs Status
Nan stok: 4070

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TSM2303CX RFG Tech
Taiwan Semiconductor Corporation - TSM2303CX RFG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TSM2303CX RFG

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Vgs (th) (Max) @ Id 3V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-23  
Seri -  
Rds Sou (Max) @ Id, Vgs 180mOhm @ 1.3A, 10V  
Dissipasyon pouvwa (Max) 700mW (Ta)  
Pake / Ka TO-236-3, SC-59, SOT-23-3  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 565 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 3.2 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1.3A (Ta)  
Nimewo pwodwi baz TSM2303  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TSM2303CX RFG.

Pwodwi atribi TSM2303CX RFG TSM2306CX RFG TSM2307CX RFG TSM2305CX RFG
Nimewo Pati TSM2303CX RFG TSM2306CX RFG TSM2307CX RFG TSM2305CX RFG
Manifakti Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Pòtay Charge (Qg) (Max) @ Vgs 3.2 nC @ 4.5 V 5.5 nC @ 4.5 V 10 nC @ 10 V 10 nC @ 10 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 700mW (Ta) 1.25W (Ta) 1.25W (Ta) 1.25W (Ta)
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 180mOhm @ 1.3A, 10V 57mOhm @ 3.5A, 10V 95mOhm @ 3A, 10V 55mOhm @ 3.2A, 4.5V
Kouran - Kontini Drain (Id) @ 25 ° C 1.3A (Ta) 3.5A (Ta) 3A (Tc) 3.2A (Ta)
Fèt tip P-Channel N-Channel P-Channel P-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kapasite Antre (Ciss) (Max) @ Vds 565 pF @ 10 V 555 pF @ 15 V 565 pF @ 30 V 990 pF @ 10 V
Seri - - - -
Drenaj Sous Voltage (Vdss) 30 V 30 V 30 V 20 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Founisè Aparèy pake SOT-23 SOT-23 SOT-23 SOT-23
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V
Vgs (th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 1V @ 250µA
Nimewo pwodwi baz TSM2303 TSM2306 TSM2307 TSM2305
Vgs (Max) ±20V ±20V ±20V ±8V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)

TSM2303CX RFG fich PDF

Download TSM2303CX RFG PDF fich ak dokiman Taiwan Semiconductor Corporation pou TSM2303CX RFG - Taiwan Semiconductor Corporation.

PCN obsolescence/ eol
Mult Dev 17/Sep/2021.pdf
Fich
TSM2303.pdf

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TSM2303CX RFG

Taiwan Semiconductor Corporation
32D-TSM2303CX RFG

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