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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTSM650N15CS
Taiwan Semiconductor Corporation
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TSM650N15CS - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TSM650N15CS
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TSM650N15CS
ECAD modèl
Pati Deskripsyon
150V, 9A, SINGLE N-CHANNEL POWER
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
TSM650N15CS.pdf
RoHs Status
Nan stok: 15198

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TSM650N15CS Tech
Taiwan Semiconductor Corporation - TSM650N15CS espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TSM650N15CS

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 4A, 10V  
Dissipasyon pouvwa (Max) 2.2W (Ta), 12.5W (Tc)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1783 pF @ 75 V  
Pòtay Charge (Qg) (Max) @ Vgs 37 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 150 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Ta), 9A (Tc)  
Nimewo pwodwi baz TSM650  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TSM650N15CS.

Pwodwi atribi TSM650N15CS TSM650P02CX RFG TSM650N15CR RLG TSM650P03CX RFG
Nimewo Pati TSM650N15CS TSM650P02CX RFG TSM650N15CR RLG TSM650P03CX RFG
Manifakti Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Nimewo pwodwi baz TSM650 TSM650 TSM650 TSM650
Vgs (Max) ±20V ±10V ±20V ±12V
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 1.8V, 4.5V 6V, 10V 2.5V, 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 5.1 nC @ 4.5 V 36 nC @ 10 V 6.4 nC @ 4.5 V
Vgs (th) (Max) @ Id 4V @ 250µA 800mV @ 250µA 4V @ 250µA 900mV @ 250µA
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Fèt tip N-Channel P-Channel N-Channel P-Channel
Dissipasyon pouvwa (Max) 2.2W (Ta), 12.5W (Tc) 1.56W (Tc) 96W (Tc) 1.56W (Tc)
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Ta), 9A (Tc) 4.1A (Tc) 24A (Tc) 4.1A (Tc)
Kapasite Antre (Ciss) (Max) @ Vds 1783 pF @ 75 V 515 pF @ 10 V 1829 pF @ 75 V 810 pF @ 15 V
Founisè Aparèy pake 8-SOP SOT-23 8-PDFN (5x6) SOT-23
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
FET Feature - - - -
Seri - - - -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) TO-236-3, SC-59, SOT-23-3 8-PowerTDFN TO-236-3, SC-59, SOT-23-3
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 65mOhm @ 4A, 10V 65mOhm @ 3A, 4.5V 65mOhm @ 4A, 10V 65mOhm @ 4A, 10V
Drenaj Sous Voltage (Vdss) 150 V 20 V 150 V 30 V

TSM650N15CS fich PDF

Download TSM650N15CS PDF fich ak dokiman Taiwan Semiconductor Corporation pou TSM650N15CS - Taiwan Semiconductor Corporation.

Fich
TSM650N15CS.pdf

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Sètifikasyon & Manm

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Taiwan Semiconductor Corporation

TSM650N15CS

Taiwan Semiconductor Corporation
32D-TSM650N15CS

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