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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTSM900N06CH
Taiwan Semiconductor Corporation
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TSM900N06CH - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TSM900N06CH
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TSM900N06CH
ECAD modèl
Pati Deskripsyon
60V, 11A, SINGLE N-CHANNEL POWER
Deskripsyon detaye
Pake
TO-251-3 Stub Leads, IPak
Done fèy
TSM900N06CH.pdf
RoHs Status
Nan stok: 73790

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TSM900N06CH Tech
Taiwan Semiconductor Corporation - TSM900N06CH espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TSM900N06CH

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-251S (I-PAK SL)  
Seri -  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 25W (Tc)  
Pake / Ka TO-251-3 Stub Leads, IPak  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 500 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Tc)  
Nimewo pwodwi baz TSM900  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TSM900N06CH.

Pwodwi atribi TSM900N06CH TSM80N1R2CH TSM850N06CX TSM900N10CP ROG
Nimewo Pati TSM900N06CH TSM80N1R2CH TSM850N06CX TSM900N10CP ROG
Manifakti Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Drenaj Sous Voltage (Vdss) 60 V 800 V 60 V 100 V
Rds Sou (Max) @ Id, Vgs 90mOhm @ 6A, 10V 1.2Ohm @ 2.75A, 10V 85mOhm @ 2.3A, 10V 90mOhm @ 5A, 10V
Founisè Aparèy pake TO-251S (I-PAK SL) TO-251 (IPAK) SOT-23 TO-252, (D-Pak)
Mounting Kalite Through Hole Through Hole Surface Mount Surface Mount
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V
Pakèt Tube Tube Tape & Reel (TR) Tape & Reel (TR)
Operating Tanperati 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 500 pF @ 15 V 685 pF @ 100 V 529 pF @ 30 V 1480 pF @ 50 V
Pake / Ka TO-251-3 Stub Leads, IPak TO-251-3 Short Leads, IPak, TO-251AA TO-236-3, SC-59, SOT-23-3 TO-252-3, DPak (2 Leads + Tab), SC-63
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Dissipasyon pouvwa (Max) 25W (Tc) 110W (Tc) 1W (Ta), 1.7W (Tc) 50W (Tc)
Vgs (th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Nimewo pwodwi baz TSM900 TSM80 TSM850 TSM900
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Tc) 5.5A (Tc) 2.3A (Ta), 3A (Tc) 15A (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (Max) ±20V ±30V ±20V ±20V
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 19.4 nC @ 10 V 9.5 nC @ 10 V 9.3 nC @ 10 V
Seri - - - -

TSM900N06CH fich PDF

Download TSM900N06CH PDF fich ak dokiman Taiwan Semiconductor Corporation pou TSM900N06CH - Taiwan Semiconductor Corporation.

Fich
TSM900N06CH.pdf

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Sètifikasyon & Manm

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Taiwan Semiconductor Corporation

TSM900N06CH

Taiwan Semiconductor Corporation
32D-TSM900N06CH

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