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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSSM3K35CTC,L3F
Toshiba Semiconductor and Storage
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SSM3K35CTC,L3F - Toshiba Semiconductor and Storage

Manifakti Nimewo Pati
SSM3K35CTC,L3F
Manifakti
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Nimewo Pati
32D-SSM3K35CTC,L3F
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 250MA CST3C
Deskripsyon detaye
Pake
SC-101, SOT-883
Done fèy
SSM3K35CTC,L3F.pdf
RoHs Status
Nan stok: 900600

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SSM3K35CTC,L3F Tech
Toshiba Semiconductor and Storage - SSM3K35CTC,L3F espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Toshiba Semiconductor and Storage - SSM3K35CTC,L3F

Pwodwi atribi Valè atribi  
Manifakti TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Vgs (th) (Max) @ Id 1V @ 100µA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake CST3C  
Seri U-MOSIII  
Rds Sou (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V  
Dissipasyon pouvwa (Max) 500mW (Ta)  
Pake / Ka SC-101, SOT-883  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 36 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 0.34 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.2V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 250mA (Ta)  
Nimewo pwodwi baz SSM3K35  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Toshiba Semiconductor and Storage SSM3K35CTC,L3F.

Pwodwi atribi SSM3K35CTC,L3F SSM3K35CT SSM3K35MFV.L3F SSM3K357R
Nimewo Pati SSM3K35CTC,L3F SSM3K35CT SSM3K35MFV.L3F SSM3K357R
Manifakti Toshiba Semiconductor and Storage TAEC Product (Toshiba Electronic Devices and Stora TAEC Product (Toshiba Electronic Devices and Stora TAEC Product (Toshiba Electronic Devices and Stora
Vgs (th) (Max) @ Id 1V @ 100µA - - -
Pake / Ka SC-101, SOT-883 - - -
Nimewo pwodwi baz SSM3K35 - - -
Pakèt Tape & Reel (TR) - - -
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 250mA (Ta) - - -
Mounting Kalite Surface Mount - - -
Vgs (Max) ±10V - - -
Kapasite Antre (Ciss) (Max) @ Vds 36 pF @ 10 V - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.2V, 4.5V - - -
Fèt tip N-Channel - - -
Founisè Aparèy pake CST3C - - -
Pòtay Charge (Qg) (Max) @ Vgs 0.34 nC @ 4.5 V - - -
Dissipasyon pouvwa (Max) 500mW (Ta) - - -
Teknoloji MOSFET (Metal Oxide) - - -
Operating Tanperati 150°C (TJ) - - -
Rds Sou (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V - - -
Drenaj Sous Voltage (Vdss) 20 V - - -
Seri U-MOSIII - - -

Shipment

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    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Toshiba Semiconductor and Storage

SSM3K35CTC,L3F

Toshiba Semiconductor and Storage
32D-SSM3K35CTC,L3F

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