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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTK62N60X,S1F
Toshiba Semiconductor and Storage
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TK62N60X,S1F - Toshiba Semiconductor and Storage

Manifakti Nimewo Pati
TK62N60X,S1F
Manifakti
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Nimewo Pati
32D-TK62N60X,S1F
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 61.8A TO247
Deskripsyon detaye
Pake
TO-247-3
Done fèy
TK62N60X,S1F.pdf
RoHs Status
Nan stok: 6954

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon TK62N60X,S1F Tech
Toshiba Semiconductor and Storage - TK62N60X,S1F espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Toshiba Semiconductor and Storage - TK62N60X,S1F

Pwodwi atribi Valè atribi  
Manifakti TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Vgs (th) (Max) @ Id 3.5V @ 3.1mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TO-247  
Seri DTMOSIV-H  
Rds Sou (Max) @ Id, Vgs 40mOhm @ 21A, 10V  
Dissipasyon pouvwa (Max) 400W (Tc)  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Through Hole  
Kapasite Antre (Ciss) (Max) @ Vds 6500 pF @ 300 V  
Pòtay Charge (Qg) (Max) @ Vgs 135 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 61.8A (Ta)  
Nimewo pwodwi baz TK62N60  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Toshiba Semiconductor and Storage TK62N60X,S1F.

Pwodwi atribi TK62N60X,S1F TK62N60W.S1VF TK63115BCB-G TK63115H-G
Nimewo Pati TK62N60X,S1F TK62N60W.S1VF TK63115BCB-G TK63115H-G
Manifakti Toshiba Semiconductor and Storage TAEC Product (Toshiba Electronic Devices and Stora Murata Electronics Murata Electronics
Drenaj Sous Voltage (Vdss) 600 V - - -
Nimewo pwodwi baz TK62N60 - - -
Rds Sou (Max) @ Id, Vgs 40mOhm @ 21A, 10V - - -
Pakèt Tube - - -
Founisè Aparèy pake TO-247 - - -
Kouran - Kontini Drain (Id) @ 25 ° C 61.8A (Ta) - - -
Pake / Ka TO-247-3 - - -
Teknoloji MOSFET (Metal Oxide) - - -
Vgs (th) (Max) @ Id 3.5V @ 3.1mA - - -
Kapasite Antre (Ciss) (Max) @ Vds 6500 pF @ 300 V - - -
Vgs (Max) ±30V - - -
Pòtay Charge (Qg) (Max) @ Vgs 135 nC @ 10 V - - -
Operating Tanperati 150°C (TJ) - - -
Fèt tip N-Channel - - -
Dissipasyon pouvwa (Max) 400W (Tc) - - -
Mounting Kalite Through Hole - - -
Seri DTMOSIV-H - - -
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - - -

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Toshiba Semiconductor and Storage

TK62N60X,S1F

Toshiba Semiconductor and Storage
32D-TK62N60X,S1F

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