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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiTLP781(GB,F)
TLP781(GB,F) Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TLP781(GB,F) - Toshiba Semiconductor and Storage

Manifakti Nimewo Pati
TLP781(GB,F)
Manifakti
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Nimewo Pati
32D-TLP781(GB,F)
ECAD modèl
Pati Deskripsyon
OPTOISOLATR 5KV TRANSISTOR 4-DIP
Deskripsyon detaye
Pake
4-DIP (0.300", 7.62mm)
Done fèy
TLP781(GB,F).pdf
RoHs Status
RoHS konfòme
Nan stok: 5320

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Espesifikasyon

Espesifikasyon TLP781(GB,F) Tech
Toshiba Semiconductor and Storage - TLP781(GB,F) espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Toshiba Semiconductor and Storage - TLP781(GB,F)

Pwodwi atribi Valè atribi  
Manifakti TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Voltage - Sòti (Max) 80V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.15V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 3µs, 3µs  
Founisè Aparèy pake 4-DIP  
Seri -  
Leve / tonbe tan (tip) 2µs, 3µs  
Pake / Ka 4-DIP (0.300", 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -55°C ~ 110°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 100% @ 5mA  
Kouran Transfè Pwopòsyon (Max) 600% @ 5mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz TLP781  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Toshiba Semiconductor and Storage TLP781(GB,F).

Pwodwi atribi TLP781(GB,F) TLP781(D4-GR,F) TLP781(GB-TP6,F) TLP781(GB-TP6F)
Nimewo Pati TLP781(GB,F) TLP781(D4-GR,F) TLP781(GB-TP6,F) TLP781(GB-TP6F)
Manifakti Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage TOS
Kalite Antre DC DC DC -
Pakèt Tube Tube - -
Nimewo pwodwi baz TLP781 TLP781 - -
Vire sou / chanje tan (tip) 3µs, 3µs 3µs, 3µs 3µs, 3µs -
Founisè Aparèy pake 4-DIP 4-DIP 4-SMD -
Seri - - - -
Kalite Sòti Transistor Transistor Transistor -
Voltage - Sòti (Max) 80V 80V 80V -
Mounting Kalite Through Hole Through Hole Surface Mount -
Kouran Transfè Pwopòsyon (Max) 600% @ 5mA 300% @ 5mA 600% @ 5mA -
Pake / Ka 4-DIP (0.300", 7.62mm) 4-DIP (0.300', 7.62mm) 4-SMD, Gull Wing -
Voltage - Forward (Vf) (tip) 1.15V 1.15V 1.15V -
Leve / tonbe tan (tip) 2µs, 3µs 2µs, 3µs 2µs, 3µs -
Nimewo Chanèl 1 1 1 -
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60mA -
Kouran Transfè Pwopòsyon (Min) 100% @ 5mA 100% @ 5mA 100% @ 5mA -
Vce Saturation (Max) 400mV 400mV 400mV -
Kouran - Sòti / Chèn 50mA 50mA 50mA -
Operating Tanperati -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C -
Voltage - Izolasyon 5000Vrms 5000Vrms 5000Vrms -

TLP781(GB,F) fich PDF

Download TLP781(GB,F) PDF fich ak dokiman Toshiba Semiconductor and Storage pou TLP781(GB,F) - Toshiba Semiconductor and Storage.

PCN obsolescence/ eol
TLP781 Series EOL 31/Oct/2019.pdf

Shipment

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Sètifikasyon & Manm

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TLP781(GB,F) Image

TLP781(GB,F)

Toshiba Semiconductor and Storage
32D-TLP781(GB,F)

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