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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTPC6107(TE85L,F,M)
TPC6107(TE85L,F,M) Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TPC6107(TE85L,F,M) - Toshiba Semiconductor and Storage

Manifakti Nimewo Pati
TPC6107(TE85L,F,M)
Manifakti
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Nimewo Pati
32D-TPC6107(TE85L,F,M)
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 20V 4.5A VS-6
Deskripsyon detaye
Pake
SOT-23-6 Thin, TSOT-23-6
Done fèy
Mosfets Prod Guide.pdf
Nan stok: 4670

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon TPC6107(TE85L,F,M) Tech
Toshiba Semiconductor and Storage - TPC6107(TE85L,F,M) espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Toshiba Semiconductor and Storage - TPC6107(TE85L,F,M)

Pwodwi atribi Valè atribi  
Manifakti TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Vgs (th) (Max) @ Id 1.2V @ 200µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake VS-6 (2.9x2.8)  
Seri U-MOSIV  
Rds Sou (Max) @ Id, Vgs 55mOhm @ 2.2A, 4.5V  
Dissipasyon pouvwa (Max) 700mW (Ta)  
Pake / Ka SOT-23-6 Thin, TSOT-23-6  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 680 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.8 nC @ 5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A (Ta)  
Nimewo pwodwi baz TPC6107  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Toshiba Semiconductor and Storage TPC6107(TE85L,F,M).

Pwodwi atribi TPC6107(TE85L,F,M) TPC6107 TPC6107(TE85L,F) TPC6108(TE85LF)
Nimewo Pati TPC6107(TE85L,F,M) TPC6107 TPC6107(TE85L,F) TPC6108(TE85LF)
Manifakti Toshiba Semiconductor and Storage TAEC Product (Toshiba Electronic Devices and Stora TAEC Product (Toshiba Electronic Devices and Stora TAEC Product (Toshiba Electronic Devices and Stora
Kapasite Antre (Ciss) (Max) @ Vds 680 pF @ 10 V - - -
Vgs (th) (Max) @ Id 1.2V @ 200µA - - -
Pake / Ka SOT-23-6 Thin, TSOT-23-6 - - -
Seri U-MOSIV - - -
Dissipasyon pouvwa (Max) 700mW (Ta) - - -
Operating Tanperati 150°C (TJ) - - -
Teknoloji MOSFET (Metal Oxide) - - -
Pòtay Charge (Qg) (Max) @ Vgs 9.8 nC @ 5 V - - -
Vgs (Max) ±12V - - -
Pakèt Tape & Reel (TR) - - -
Founisè Aparèy pake VS-6 (2.9x2.8) - - -
FET Feature - - - -
Nimewo pwodwi baz TPC6107 - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 2V, 4.5V - - -
Mounting Kalite Surface Mount - - -
Rds Sou (Max) @ Id, Vgs 55mOhm @ 2.2A, 4.5V - - -
Drenaj Sous Voltage (Vdss) 20 V - - -
Fèt tip P-Channel - - -
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A (Ta) - - -

TPC6107(TE85L,F,M) fich PDF

Download TPC6107(TE85L,F,M) PDF fich ak dokiman Toshiba Semiconductor and Storage pou TPC6107(TE85L,F,M) - Toshiba Semiconductor and Storage.

Fich
Mosfets Prod Guide.pdf

Shipment

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Sètifikasyon & Manm

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TPC6107(TE85L,F,M) Image

TPC6107(TE85L,F,M)

Toshiba Semiconductor and Storage
32D-TPC6107(TE85L,F,M)

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