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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTPH7R506NH,L1Q
Toshiba Semiconductor and Storage
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TPH7R506NH,L1Q - Toshiba Semiconductor and Storage

Manifakti Nimewo Pati
TPH7R506NH,L1Q
Manifakti
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Nimewo Pati
32D-TPH7R506NH,L1Q
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 60V 22A 8SOP
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
TPH7R506NH,L1Q.pdf
RoHs Status
RoHS konfòme
Nan stok: 74520

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon TPH7R506NH,L1Q Tech
Toshiba Semiconductor and Storage - TPH7R506NH,L1Q espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Toshiba Semiconductor and Storage - TPH7R506NH,L1Q

Pwodwi atribi Valè atribi  
Manifakti TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Vgs (th) (Max) @ Id 4V @ 300µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOP Advance (5x5)  
Seri U-MOSVIII-H  
Rds Sou (Max) @ Id, Vgs 7.5mOhm @ 11A, 10V  
Dissipasyon pouvwa (Max) 1.6W (Ta), 45W (Tc)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2320 pF @ 30 V  
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 22A (Ta)  
Nimewo pwodwi baz TPH7R506  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Toshiba Semiconductor and Storage TPH7R506NH,L1Q.

Pwodwi atribi TPH7R506NH,L1Q TPH6R003NL,LQ(S TPH8R008NH TPH7R506NHL1Q(M)
Nimewo Pati TPH7R506NH,L1Q TPH6R003NL,LQ(S TPH8R008NH TPH7R506NHL1Q(M)
Manifakti Toshiba Semiconductor and Storage TOSHIBA TAEC Product (Toshiba Electronic Devices and Stora TAEC Product (Toshiba Electronic Devices and Stora
Kouran - Kontini Drain (Id) @ 25 ° C 22A (Ta) - - -
Rds Sou (Max) @ Id, Vgs 7.5mOhm @ 11A, 10V - - -
Pake / Ka 8-PowerVDFN - - -
Fèt tip N-Channel - - -
Mounting Kalite Surface Mount - - -
Kapasite Antre (Ciss) (Max) @ Vds 2320 pF @ 30 V - - -
Dissipasyon pouvwa (Max) 1.6W (Ta), 45W (Tc) - - -
Operating Tanperati 150°C (TJ) - - -
Founisè Aparèy pake 8-SOP Advance (5x5) - - -
Seri U-MOSVIII-H - - -
Vgs (Max) ±20V - - -
FET Feature - - - -
Nimewo pwodwi baz TPH7R506 - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V - - -
Pòtay Charge (Qg) (Max) @ Vgs 31 nC @ 10 V - - -
Teknoloji MOSFET (Metal Oxide) - - -
Pakèt Tape & Reel (TR) - - -
Vgs (th) (Max) @ Id 4V @ 300µA - - -
Drenaj Sous Voltage (Vdss) 60 V - - -

Shipment

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Sètifikasyon & Manm

Wè plis
Toshiba Semiconductor and Storage

TPH7R506NH,L1Q

Toshiba Semiconductor and Storage
32D-TPH7R506NH,L1Q

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