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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTPN1110ENH,L1Q
Toshiba Semiconductor and Storage
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TPN1110ENH,L1Q - Toshiba Semiconductor and Storage

Manifakti Nimewo Pati
TPN1110ENH,L1Q
Manifakti
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Allelco Nimewo Pati
32D-TPN1110ENH,L1Q
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 200V 7.2A 8TSON
Deskripsyon detaye
Pake
8-PowerVDFN
Done fèy
TPN1110ENH,L1Q.pdf
RoHs Status
RoHS konfòme
Nan stok: 60230

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Espesifikasyon

Espesifikasyon TPN1110ENH,L1Q Tech
Toshiba Semiconductor and Storage - TPN1110ENH,L1Q espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Toshiba Semiconductor and Storage - TPN1110ENH,L1Q

Pwodwi atribi Valè atribi  
Manifakti TAEC Product (Toshiba Electronic Devices and Storage Corporation)  
Vgs (th) (Max) @ Id 4V @ 200µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-TSON Advance (3.1x3.1)  
Seri U-MOSVIII-H  
Rds Sou (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V  
Dissipasyon pouvwa (Max) 700mW (Ta), 39W (Tc)  
Pake / Ka 8-PowerVDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 600 pF @ 100 V  
Pòtay Charge (Qg) (Max) @ Vgs 7 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7.2A (Ta)  
Nimewo pwodwi baz TPN1110  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Toshiba Semiconductor and Storage TPN1110ENH,L1Q.

Pwodwi atribi TPN1110ENH,L1Q TPN2R203NC,L1Q TPN11006NL TPN1200APL.L1Q(M)
Nimewo Pati TPN1110ENH,L1Q TPN2R203NC,L1Q TPN11006NL TPN1200APL.L1Q(M)
Manifakti Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage LQ TAEC Product (Toshiba Electronic Devices and Stora
Vgs (th) (Max) @ Id 4V @ 200µA 2.3V @ 500µA - -
Drenaj Sous Voltage (Vdss) 200 V 30 V - -
Pake / Ka 8-PowerVDFN 8-PowerVDFN - -
Vgs (Max) ±20V ±20V - -
Operating Tanperati 150°C (TJ) 150°C (TJ) - -
Nimewo pwodwi baz TPN1110 TPN2R203 - -
Rds Sou (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V 2.2mOhm @ 22.5A, 10V - -
Kouran - Kontini Drain (Id) @ 25 ° C 7.2A (Ta) 45A (Tc) - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Pòtay Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 34 nC @ 10 V - -
Seri U-MOSVIII-H U-MOSVIII - -
Fèt tip N-Channel N-Channel - -
Mounting Kalite Surface Mount Surface Mount - -
Kapasite Antre (Ciss) (Max) @ Vds 600 pF @ 100 V 2230 pF @ 15 V - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V - -
Dissipasyon pouvwa (Max) 700mW (Ta), 39W (Tc) 700mW (Ta), 42W (Tc) - -
FET Feature - - - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) - -
Founisè Aparèy pake 8-TSON Advance (3.1x3.1) 8-TSON Advance (3.1x3.1) - -

Shipment

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Sètifikasyon & Manm

Wè plis
Toshiba Semiconductor and Storage

TPN1110ENH,L1Q

Toshiba Semiconductor and Storage
32D-TPN1110ENH,L1Q

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