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KayPwodwi yoDiskresyon semiconductor pwodwiThyristors - SCRs16TTS12FP
16TTS12FP Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
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16TTS12FP - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
16TTS12FP
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-16TTS12FP
ECAD modèl
Pati Deskripsyon
SCR 1.2KV 16A TO220AB FP
Pake
TO-220-3 Full Pack
Done fèy
16TTS FP Series.pdf
Sètifikasyon nou an
Nan stok: 3950

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EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon 16TTS12FP Tech
Vishay General Semiconductor - Diodes Division - 16TTS12FP espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - 16TTS12FP

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Sou Eta (Vtm) (Max) 1.4 V  
Voltage - Off Eta 1.2 kV  
Voltage - Gate deklannche (Vgt) (Max) 2 V  
Founisè Aparèy pake TO-220AB Full-Pak  
Seri -  
SCR Kalite Standard Recovery  
Pake / Ka TO-220-3 Full Pack  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 125°C  
Mounting Kalite Through Hole  
Kouran - Sou Eta (Li (RMS)) (Max) 16 A  
Kouran - Sou Eta (Li (AV)) (Max) 10 A  
Kouran - Off State (Max) 500 µA  
Kouran - ki pa Peye Repete 50, 60Hz (Itm) 200A @ 50Hz  
Kouran - Kenbe (li) (Max) 100 mA  
Kouran - Trigger Gate (Igt) (Max) 60 mA  
Nimewo pwodwi baz 16TTS12  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status RoHS ki pa konfòme
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS 8541.30.0080

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division 16TTS12FP.

Pwodwi atribi 16TTS12FP 16TTS08STRR 16TTS08 16TTS08S
Nimewo Pati 16TTS12FP 16TTS08STRR 16TTS08 16TTS08S
Manifakti Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Operating Tanperati -40°C ~ 125°C -40°C ~ 125°C -40°C ~ 125°C -40°C ~ 125°C
Voltage - Gate deklannche (Vgt) (Max) 2 V 2 V 2 V 2 V
Voltage - Off Eta 1.2 kV 800 V 800 V 800 V
Nimewo pwodwi baz 16TTS12 16TTS08 16TTS08 16TTS08
Kouran - Kenbe (li) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Sou Eta (Vtm) (Max) 1.4 V 1.4 V 1.4 V 1.4 V
Seri - - - -
Pakèt Tube Tape & Reel (TR) Tube Tube
Mounting Kalite Through Hole Surface Mount Through Hole Surface Mount
Kouran - Sou Eta (Li (AV)) (Max) 10 A 10 A 10 A 10 A
Kouran - ki pa Peye Repete 50, 60Hz (Itm) 200A @ 50Hz 200A @ 50Hz 200A @ 50Hz 200A @ 50Hz
Kouran - Off State (Max) 500 µA 500 µA 500 µA 500 µA
SCR Kalite Standard Recovery Standard Recovery Standard Recovery Standard Recovery
Pake / Ka TO-220-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kouran - Sou Eta (Li (RMS)) (Max) 16 A 16 A 16 A 16 A
Kouran - Trigger Gate (Igt) (Max) 60 mA 60 mA 60 mA 60 mA
Founisè Aparèy pake TO-220AB Full-Pak TO-263AB (D²PAK) TO-220-3 TO-263AB (D²PAK)

16TTS12FP fich PDF

Download 16TTS12FP PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou 16TTS12FP - Vishay General Semiconductor - Diodes Division.

Fich
16TTS FP Series.pdf

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Sètifikasyon & Manm

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16TTS12FP Image

16TTS12FP

Vishay General Semiconductor - Diodes Division
32D-16TTS12FP

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